Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Published 2008 View Full Article

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Title
Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
Authors
Keywords
-
Journal
Applied Physics Express
Volume 1, Issue -, Pages 124002
Publisher
IOP Publishing
Online
2008-12-12
DOI
10.1143/apex.1.124002

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