Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

(2012) Chao Liu et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Single InGaN nanodisk light emitting diodes as full-color subwavelength light sources

(2011)   APPLIED PHYSICS LETTERS

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2011) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Polarization-engineered GaN/InGaN/GaN tunnel diodes

(2010) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Effects of polarization charge on the photovoltaic properties of InGaN solar cells

(2010) Z. Q. Li et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE