Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices

(2009) O. Malis et al.   APPLIED PHYSICS LETTERS

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

(2009) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

(2009) S. Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Nitrogen-polar GaN growth evolution on c-plane sapphire

(2008) Q. Sun et al.   APPLIED PHYSICS LETTERS

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

(2008) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

(2008) Jungwoo Joh et al.   IEEE ELECTRON DEVICE LETTERS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

(2008) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire

(2008) V. Darakchieva et al.   JOURNAL OF APPLIED PHYSICS