Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Published 2009 View Full Article

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Title
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 15, Pages 3817-3823
Publisher
Elsevier BV
Online
2009-06-03
DOI
10.1016/j.jcrysgro.2009.02.051

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