Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

(2013) Jing Lu et al.   APPLIED PHYSICS LETTERS

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

(2013) Baishakhi Mazumder et al.   APPLIED PHYSICS LETTERS

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

(2013) M. Jurkovic et al.   IEEE ELECTRON DEVICE LETTERS

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

(2012) Soojeong Choi et al.   APPLIED PHYSICS LETTERS

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source

(2012) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

(2011) Jia Guo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

N-Polar InAlN/AlN/GaN MIS-HEMTs

(2010) David F Brown et al.   IEEE ELECTRON DEVICE LETTERS

Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices

(2009) O. Malis et al.   APPLIED PHYSICS LETTERS

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

(2009) S.-L. Sahonta et al.   APPLIED PHYSICS LETTERS

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

(2008) H. P. D. Schenk et al.   APPLIED PHYSICS LETTERS

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

(2008) Tom Zimmermann et al.   IEEE ELECTRON DEVICE LETTERS