Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

Published 2013 View Full Article

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Title
Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 11R, Pages 115503
Publisher
Japan Society of Applied Physics
Online
2013-12-21
DOI
10.7567/jjap.51.115503

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