AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

Title
AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
Authors
Keywords
-
Journal
Applied Physics Express
Volume 1, Issue -, Pages 021103
Publisher
IOP Publishing
Online
2008-02-08
DOI
10.1143/apex.1.021103

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