Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

Misorientation defects in coalesced self-catalyzed GaN nanowires

(2013) K.A. Grossklaus et al.   JOURNAL OF CRYSTAL GROWTH

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Modeling GaN nanowire growth on silicon

(2013) V. G. Dubrovskii et al.   TECHNICAL PHYSICS LETTERS

Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 $\mu$m

(2012) Katsumi Kishino et al.   Applied Physics Express

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

(2012) K. Hestroffer et al.   APPLIED PHYSICS LETTERS

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

(2012) Praveen Kumar et al.   APPLIED PHYSICS LETTERS

Scaling growth kinetics of self-induced GaN nanowires

(2012) Vladimir G. Dubrovskii et al.   APPLIED PHYSICS LETTERS

N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)

(2012) Ludovic Largeau et al.   CRYSTAL GROWTH & DESIGN

GaN based nanorods for solid state lighting

(2012) Shunfeng Li et al.   JOURNAL OF APPLIED PHYSICS

Self-Assembled GaN Nanowires on Diamond

(2012) Fabian Schuster et al.   NANO LETTERS

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

(2012) M. I. den Hertog et al.   NANO LETTERS

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

(2012) Maria de la Mata et al.   NANO LETTERS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

(2012) A Wierzbicka et al.   NANOTECHNOLOGY

Scaling thermodynamic model for the self-induced nucleation of GaN nanowires

(2012) Vladimir G. Dubrovskii et al.   PHYSICAL REVIEW B

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

(2012) V. M. Kaganer et al.   PHYSICAL REVIEW B

Quantitative description for the growth rate of self-induced GaN nanowires

(2012) V. Consonni et al.   PHYSICAL REVIEW B

Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

(2012) N. V. Sibirev et al.   SEMICONDUCTORS

The influence of Mg doping on the nucleation of self-induced GaN nanowires

(2012) F. Limbach et al.   AIP Advances

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

(2011) V. Consonni et al.   APPLIED PHYSICS LETTERS

Physical origin of the incubation time of self-induced GaN nanowires

(2011) V. Consonni et al.   APPLIED PHYSICS LETTERS

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

(2011) P. Lefebvre et al.   APPLIED PHYSICS LETTERS

Ultra-thin high-quality silicon nitride films on Si(111)

(2011) J. Falta et al.   EPL

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

(2011) Toma Stoica et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

(2011) Matt D. Brubaker et al.   JOURNAL OF APPLIED PHYSICS

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

(2011) Rafael Mata et al.   JOURNAL OF CRYSTAL GROWTH

Three-Dimensional GaN/AlN Nanowire Heterostructures by Separating Nucleation and Growth Processes

(2011) Santino D. Carnevale et al.   NANO LETTERS

Macro- and micro-strain in GaN nanowires on Si(111)

(2011) B Jenichen et al.   NANOTECHNOLOGY

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns

(2011) X Kong et al.   NANOTECHNOLOGY

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

(2011) E Galopin et al.   NANOTECHNOLOGY

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

(2011) V. Consonni et al.   PHYSICAL REVIEW B

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

In situ investigation of self-induced GaN nanowire nucleation on Si

(2010) C. Chèze et al.   APPLIED PHYSICS LETTERS

Different growth rates for catalyst-induced and self-induced GaN nanowires

(2010) C. Chèze et al.   APPLIED PHYSICS LETTERS

GaN Nanowires Grown by Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

(2010) L. Rigutti et al.   NANO LETTERS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

In situanalysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires

(2010) M Knelangen et al.   NANOTECHNOLOGY

Identification of III–N nanowire growth kinetics via a marker technique

(2010) R Songmuang et al.   NANOTECHNOLOGY

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

(2010) V. Consonni et al.   PHYSICAL REVIEW B

Effects of nanowire coalescence on their structural and optical properties on a local scale

(2009) V. Consonni et al.   APPLIED PHYSICS LETTERS

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

(2009) C.T. Foxon et al.   JOURNAL OF CRYSTAL GROWTH

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

(2009) Jordi Arbiol et al.   NANOTECHNOLOGY

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

(2009) O Landré et al.   NANOTECHNOLOGY

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

(2008) O. Landré et al.   APPLIED PHYSICS LETTERS

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

(2008) H. Sekiguchi et al.   ELECTRONICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

(2008) K.A. Bertness et al.   JOURNAL OF CRYSTAL GROWTH

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

(2008) L Largeau et al.   NANOTECHNOLOGY

Growth kinetics and crystal structure of semiconductor nanowires

(2008) V. G. Dubrovskii et al.   PHYSICAL REVIEW B

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small