Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths

(2010) C. H. Wang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

(2009) Yen-Kuang Kuo et al.   OPTICS COMMUNICATIONS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS