Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Published 2015 View Full Article

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Title
Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Authors
Keywords
-
Journal
CRYSTAL GROWTH & DESIGN
Volume 16, Issue 2, Pages 596-604
Publisher
American Chemical Society (ACS)
Online
2015-12-19
DOI
10.1021/acs.cgd.5b00910

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