Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer

(2013) Karine Hestroffer et al.   Physica Status Solidi-Rapid Research Letters

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

(2012) K. Hestroffer et al.   APPLIED PHYSICS LETTERS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate

(2012) A Wierzbicka et al.   NANOTECHNOLOGY

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

(2011) V. Consonni et al.   PHYSICAL REVIEW B

Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

(2011) S. Gieraltowska et al.   THIN SOLID FILMS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY