InAlN/GaN HEMTs With AlGaN Back Barriers

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

(2010) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

Aspect Ratio Impact on RF and DC Performance of State-of-the-Art Short-Channel GaN and InGaAs HEMTs

(2010) Diego Guerra et al.   IEEE ELECTRON DEVICE LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(2009) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Barrier-Layer Scaling of InAlN/GaN HEMTs

(2008) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS