Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

(2012) Uttam Singisetti et al.   APPLIED PHYSICS LETTERS

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

(2011) Pil Sung Park et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition

(2011) Roy B. Chung et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

(2010) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

(2010) Seshadri Kolluri et al.   JOURNAL OF APPLIED PHYSICS

Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistors

(2009) Tomas Palacios   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors

(2008) Nidhi et al.   JOURNAL OF APPLIED PHYSICS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS