Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
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Title
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 84, Issue 24, Pages -
Publisher
American Physical Society (APS)
Online
2011-12-08
DOI
10.1103/physrevb.84.245302
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Related references
Note: Only part of the references are listed.- On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
- (2011) B. Alloing et al. APPLIED PHYSICS LETTERS
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- Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
- (2009) J. Renard et al. PHYSICAL REVIEW B
- Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
- (2008) O. Landré et al. APPLIED PHYSICS LETTERS
- Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
- (2008) D. Cherns et al. APPLIED PHYSICS LETTERS
- Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
- (2008) Florian Furtmayr et al. JOURNAL OF APPLIED PHYSICS
- Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
- (2008) L Largeau et al. NANOTECHNOLOGY
- Fundamental limits to power consumption of LC subthreshold oscillators
- (2007) S. Di Pascoli ELECTRONICS LETTERS
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