Understanding and controlling indium incorporation and surface segregation on InxGa1−xN surfaces: Anab initioapproach

NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

(2012) J.R. Lang et al.   JOURNAL OF CRYSTAL GROWTH

A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

(2012) Ž. Gačević et al.   JOURNAL OF CRYSTAL GROWTH

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

(2011) M. Siekacz et al.   JOURNAL OF APPLIED PHYSICS

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity

(2010) M. V. Durnev et al.   APPLIED PHYSICS LETTERS

Vanadium adsorption and incorporation at the GaN(0001) surface: A first-principles study

(2010) Rafael González-Hernández et al.   PHYSICAL REVIEW B

GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation

(2009) John E. Northrup   APPLIED PHYSICS LETTERS

An ab initio-based approach to the stability of GaN(0001) surfaces under Ga-rich conditions

(2009) Tomonori Ito et al.   JOURNAL OF CRYSTAL GROWTH

Suppression of phase separation in InGaN layers grown on lattice-matched ZnO substrates

(2009) Nola Li et al.   JOURNAL OF CRYSTAL GROWTH

Microstructures produced during the epitaxial growth of InGaN alloys

(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Impact of hydrogen on indium incorporation atm-plane andc-planeIn0.25Ga0.75Nsurfaces: First-principles calculations

(2009) John E. Northrup   PHYSICAL REVIEW B

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy

(2008) M. Siekacz et al.   JOURNAL OF CRYSTAL GROWTH

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

(2008) C. Skierbiszewski et al.   JOURNAL OF CRYSTAL GROWTH

First-principles study of In, Ga, and N adsorption onInxGa1−xN(0001) and(0001¯)surfaces

(2008) Chee Kwan Gan et al.   PHYSICAL REVIEW B