Reconstructions and electronic structure of (112¯2) and (112¯2¯) semipolar AlN surfaces

Electronic structure of 1/6〈202¯3〉 partial dislocations in wurtzite GaN

(2011) J. Kioseoglou et al.   JOURNAL OF APPLIED PHYSICS

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

(2010) Krishnan Balakrishnan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Defect structure in heteroepitaxial semipolar (11\bar {2} 2 ) (Ga, Al)N

(2010) Y Arroyo Rojas Dasilva et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Stranski–Krastanow growth of (112¯2)-oriented GaN/AlN quantum dots

(2009) L. Lahourcade et al.   APPLIED PHYSICS LETTERS

GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation

(2009) John E. Northrup   APPLIED PHYSICS LETTERS

Surface Reconstructions on GaN and InN Semipolar (11\bar22) Surfaces

(2009) Tomoki Yamashita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B

Reconstructions and origin of surface states on AlN polar and nonpolar surfaces

(2009) M. S. Miao et al.   PHYSICAL REVIEW B

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS