Direct experimental determination of the spontaneous polarization of GaN

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

(2011) Pinar Dogan et al.   CRYSTAL GROWTH & DESIGN

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

(2011) G. Jacopin et al.   JOURNAL OF APPLIED PHYSICS

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

(2011) Pinar Dogan et al.   JOURNAL OF CRYSTAL GROWTH

Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states

(2011) A. Belabbes et al.   PHYSICAL REVIEW B

Estimates of the spontaneous polarization and permittivities of AlN, GaN, InN, and SiC crystals

(2011) S. Yu. Davydov   PHYSICS OF THE SOLID STATE

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

(2010) Carsten Pfüller et al.   Nano Research

Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

(2010) U. Jahn et al.   PHYSICAL REVIEW B

Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

(2010) Carsten Pfüller et al.   PHYSICAL REVIEW B

A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN

(2009) W. S. Yan et al.   APPLIED PHYSICS LETTERS

Electron localization by a donor in the vicinity of a basal stacking fault in GaN

(2009) P. Corfdir et al.   PHYSICAL REVIEW B