GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

(2013) Baishakhi Mazumder et al.   APPLIED PHYSICS LETTERS

Electron microscopy investigations of purity of AlN interlayer in AlxGa1−xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy

(2013) D. V. Sridhara Rao et al.   APPLIED PHYSICS LETTERS

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

(2013) Tatsuya Fujishima et al.   APPLIED PHYSICS LETTERS

Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN

(2013) S.W. Kaun et al.   ELECTRONICS LETTERS

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

(2013) Yuanzheng Yue et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

(2013) Lorenzo Lugani et al.   JOURNAL OF APPLIED PHYSICS

History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

(2013) Shuji Nakamura et al.   PROCEEDINGS OF THE IEEE

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

(2012) Soojeong Choi et al.   APPLIED PHYSICS LETTERS

Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

(2012) B. Mazumder et al.   APPLIED PHYSICS LETTERS

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

(2012) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

(2012) Jia Guo et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

(2012) Michael J. Uren et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

(2011) T. J. Prosa et al.   APPLIED PHYSICS LETTERS

InAlN/GaN HEMTs With AlGaN Back Barriers

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

(2011) A. Asgari et al.   JOURNAL OF APPLIED PHYSICS

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

(2010) T. Lim et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

(2010) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(2010) Yu Cao et al.   JOURNAL OF CRYSTAL GROWTH

Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation

(2010) Liang Pang et al.   JOURNAL OF ELECTRONIC MATERIALS

Exact determination of electrical properties of wurtzite Al1− xIn xN/(AlN)/GaN heterostructures (0.07 ≤  x ≤ 0.21) by means of a detailed charge balance equation

(2010) Marcus Gonschorek et al.   International Journal of Microwave and Wireless Technologies

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

(2009) S.-L. Sahonta et al.   APPLIED PHYSICS LETTERS

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

(2009) Remziye Tülek et al.   JOURNAL OF APPLIED PHYSICS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

A System for Simulation of Tip Evolution Under Field Evaporation

(2009) BP Geiser et al.   MICROSCOPY AND MICROANALYSIS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

(2008) Makoto Miyoshi et al.   Applied Physics Express

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

(2008) S. Fernández-Garrido et al.   APPLIED PHYSICS LETTERS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE