Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

On carrier spillover in c- and m-plane InGaN light emitting diodes

(2009) J. Lee et al.   APPLIED PHYSICS LETTERS

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2009) Sheng-Horng Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

(2009) Yen-Kuang Kuo et al.   OPTICS COMMUNICATIONS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS