Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

(2011) T Schumann et al.   NANOTECHNOLOGY

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   ADVANCED FUNCTIONAL MATERIALS

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

(2010) S. Hertenberger et al.   JOURNAL OF APPLIED PHYSICS

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

(2010) Benedikt Bauer et al.   NANOTECHNOLOGY

GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

(2010) A.-L. Bavencove et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

(2010) V. Consonni et al.   PHYSICAL REVIEW B

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

(2009) O Landré et al.   NANOTECHNOLOGY

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

(2008) Hiroto Sekiguchi et al.   Applied Physics Express

Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy

(2008) Shunsuke Ishizawa et al.   Applied Physics Express

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

(2008) O. Landré et al.   APPLIED PHYSICS LETTERS

Single nanowire photovoltaics

(2008) Bozhi Tian et al.   CHEMICAL SOCIETY REVIEWS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

(2008) K.A. Bertness et al.   JOURNAL OF CRYSTAL GROWTH

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

(2008) Jelena Ristić et al.   JOURNAL OF CRYSTAL GROWTH

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

(2008) L Largeau et al.   NANOTECHNOLOGY

Acoustic charge transport in GaN nanowires

(2008) J Ebbecke et al.   NANOTECHNOLOGY

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

(2008) Hiroto Sekiguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small