Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 25, Issue 13, Pages 135610
Publisher
IOP Publishing
Online
2014-03-05
DOI
10.1088/0957-4484/25/13/135610
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy
- (2014) Marta Sobanska et al. JOURNAL OF APPLIED PHYSICS
- Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
- (2013) D. Sam-Giao et al. JOURNAL OF APPLIED PHYSICS
- Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy
- (2013) Sergio Fernández-Garrido et al. NANO LETTERS
- Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes
- (2013) Santino D. Carnevale et al. NANO LETTERS
- In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
- (2012) K. Hestroffer et al. APPLIED PHYSICS LETTERS
- GaN based nanorods for solid state lighting
- (2012) Shunfeng Li et al. JOURNAL OF APPLIED PHYSICS
- Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity
- (2012) Sergio Fernández-Garrido et al. NANO LETTERS
- Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate
- (2012) A Wierzbicka et al. NANOTECHNOLOGY
- Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2–Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors
- (2012) Geetha S Aluri et al. NANOTECHNOLOGY
- Scaling thermodynamic model for the self-induced nucleation of GaN nanowires
- (2012) Vladimir G. Dubrovskii et al. PHYSICAL REVIEW B
- Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
- (2011) L. Geelhaar et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
- (2011) Rafael Mata et al. JOURNAL OF CRYSTAL GROWTH
- Macro- and micro-strain in GaN nanowires on Si(111)
- (2011) B Jenichen et al. NANOTECHNOLOGY
- Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
- (2011) V. Consonni et al. PHYSICAL REVIEW B
- Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
- (2011) Karine Hestroffer et al. PHYSICAL REVIEW B
- In situ investigation of self-induced GaN nanowire nucleation on Si
- (2010) C. Chèze et al. APPLIED PHYSICS LETTERS
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
- (2010) Hiroto Sekiguchi et al. APPLIED PHYSICS LETTERS
- Direct comparison of catalyst-free and catalyst-induced GaN nanowires
- (2010) Caroline Chèze et al. Nano Research
- Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
- (2010) G Koblmüller et al. NANOTECHNOLOGY
- Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
- (2010) Oliver Brandt et al. PHYSICAL REVIEW B
- Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
- (2009) P. Corfdir et al. JOURNAL OF APPLIED PHYSICS
- A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
- (2009) S. Fernández-Garrido et al. JOURNAL OF APPLIED PHYSICS
- Formation of GaN nanodots on Si (111) by droplet nitridation
- (2009) R.K. Debnath et al. JOURNAL OF CRYSTAL GROWTH
- Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
- (2009) O Landré et al. NANOTECHNOLOGY
- Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
- (2008) A. Fontcuberta i Morral et al. APPLIED PHYSICS LETTERS
- Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
- (2008) Florian Furtmayr et al. JOURNAL OF APPLIED PHYSICS
- Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
- (2008) K.A. Bertness et al. JOURNAL OF CRYSTAL GROWTH
- On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
- (2008) Jelena Ristić et al. JOURNAL OF CRYSTAL GROWTH
- Polarization-resolved phonon-assisted optical transitions of bound excitons in wurtzite GaN
- (2008) A. A. Toropov et al. PHYSICAL REVIEW B
- Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires
- (2008) Toma Stoica et al. Small
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now