Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures

Composition and strain of Ge domes on Si(001) close to the dome/susbtrate interface

(2011) N. A. Katcho et al.   EPL

Atomic structure and composition of the2×Nreconstruction of the Ge wetting layer on Si(001) investigated by surface x-ray diffraction

(2011) T. Zhou et al.   PHYSICAL REVIEW B

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

The structural properties of GaN/AlN core–shell nanocolumn heterostructures

(2010) K Hestroffer et al.   NANOTECHNOLOGY

Compositional mapping of semiconductor quantum dots and rings

(2010) Giorgio Biasiol et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays

(2009) M.-I. Richard et al.   APPLIED PHYSICS LETTERS

Diffraction anomalous fine structure study of iron/iron oxide nanoparticles

(2009) Carlo Meneghini et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Revealing Quantitative 3D Chemical Arrangement on Ge−Si Nanostructures

(2009) Luciano A. Montoro et al.   Journal of Physical Chemistry C

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B

In situx-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes

(2009) M.-I. Richard et al.   PHYSICAL REVIEW B

Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates

(2009) T. U. Schülli et al.   PHYSICAL REVIEW LETTERS

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

(2008) O. Landré et al.   APPLIED PHYSICS LETTERS

Resonant x-ray scattering from self-assembled InP∕GaAs(001) islands: Understanding the chemical structure of quaternary quantum dots

(2008) L. N. Coelho et al.   APPLIED PHYSICS LETTERS

GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy

(2008) H. Sekiguchi et al.   ELECTRONICS LETTERS

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

(2008) K.A. Bertness et al.   JOURNAL OF CRYSTAL GROWTH

Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography

(2008) Armando Rastelli et al.   NANO LETTERS

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

(2008) L Largeau et al.   NANOTECHNOLOGY

Evolution of Thermodynamic Potentials in Closed and Open Nanocrystalline Systems: Ge-Si:Si(001) Islands

(2008) Marina S. Leite et al.   PHYSICAL REVIEW LETTERS