Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy

Published 2012 View Full Article

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Title
Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 531, Issue -, Pages 88-92
Publisher
Elsevier BV
Online
2012-12-24
DOI
10.1016/j.tsf.2012.12.049

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