Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

Published 2013 View Full Article

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Title
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 24, Issue 17, Pages 175303
Publisher
IOP Publishing
Online
2013-04-04
DOI
10.1088/0957-4484/24/17/175303

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