N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

Published 2009 View Full Article

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Title
N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 2, Pages 113-116
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-01-06
DOI
10.1109/led.2008.2010415

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