Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h

(2013) Brian M. McSkimming et al.   JOURNAL OF CRYSTAL GROWTH

X-band power performance of N-face GaN MIS-HEMTs

(2011) M.H. Wong et al.   ELECTRONICS LETTERS

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

(2008) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

(2008) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE