N-polar GaN epitaxy and high electron mobility transistors

Published 2013 View Full Article

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Title
N-polar GaN epitaxy and high electron mobility transistors
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 28, Issue 7, Pages 074009
Publisher
IOP Publishing
Online
2013-06-21
DOI
10.1088/0268-1242/28/7/074009

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