Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

(2022) Zhaohao Zhang et al.   ACS Applied Materials & Interfaces

Re-FeMAT: A Reconfigurable Multifunctional FeFET-based Memory Architecture

(2022) Xiaoyu Zhang et al.   IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays

(2022) T. Francois et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

(2022) Shan Deng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update

(2022) Khandker Akif Aabrar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

(2022) Yannan Xu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

(2022) Peng Yuan et al.   Nano Research

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

(2022) Yan Cheng et al.   Nature Communications

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

(2022) Seunghun Kang et al.   SCIENCE

Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision

(2022) Boyuan Cui et al.   Nature Communications

HfO2-based ferroelectrics: From enhancing performance, material design, to applications

(2022) Haiyan Chen et al.   Applied Physics Reviews

The fundamentals and applications of ferroelectric HfO2

(2022) Uwe Schroeder et al.   Nature Reviews Materials

Improved ferroelectric characteristics of ALD lanthanum-doped hafnium oxide thin film by controlling post-cooling time

(2022) Boncheol Ku et al.   APPLIED SURFACE SCIENCE

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

(2022) Jiajia Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

(2021) Lutz Baumgarten et al.   APPLIED PHYSICS LETTERS

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

(2021) Xianghan Xu et al.   NATURE MATERIALS

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation

(2021) Pengying Chang et al.   Science China-Information Sciences

Nonlinear domain wall velocity in ferroelectric Si-doped HfO2 thin film capacitors

(2021) So Yeon Lim et al.   APPLIED PHYSICS LETTERS

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

(2021) Yi-Shan Kuo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements

(2021) Junkang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Next generation ferroelectric materials for semiconductor process integration and their applications

(2021) T. Mikolajick et al.   JOURNAL OF APPLIED PHYSICS

A synergistic interplay between dopant ALD cycles and film thickness on the improvement of the ferroelectricity of uncapped Al:HfO2 nanofilms

(2021) Lulu Yao et al.   NANOTECHNOLOGY

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

(2021) Terence Mittmann et al.   Physica Status Solidi-Rapid Research Letters

Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films

(2021) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

(2021) C.-Y. Liao et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing

(2021) Gihun Choe et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Trapped-Charge Variations on Scaled Ferroelectric FET Nonvolatile Memories

(2021) You-Sheng Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

(2021) Pavan Nukala et al.   SCIENCE

Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

(2021) Kyoungjun Lee et al.   Scientific Reports

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films

(2021) Hyangsook Lee et al.   ACS Applied Materials & Interfaces

Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

(2021) Hao-Kai Peng et al.   IEEE ELECTRON DEVICE LETTERS

Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering

(2021) Pengying Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET

(2021) Y. Higashi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric field-effect transistors based on HfO2: a review

(2021) Halid Mulaosmanovic et al.   NANOTECHNOLOGY

Ordering of Oxygen Vacancies and Related Ferroelectric Properties in HfO2−δ

(2021) Konstantin Z. Rushchanskii et al.   PHYSICAL REVIEW LETTERS

Trilinear-coupling-driven ferroelectricity in HfO2

(2021) Francesco Delodovici et al.   Physical Review Materials

3D AND-Type Ferroelectric Transistors for Compute-in-Memory and the Variability Analysis

(2021) Gihun Choe et al.   IEEE ELECTRON DEVICE LETTERS

Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory

(2021) Munhyeon Kim et al.   IEEE ELECTRON DEVICE LETTERS

HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

(2021) Yue Peng et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function

(2021) Yi-Fan Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric switching behavior of nanoscale Hf0.5Zr0.5O2 grains

(2021) Qiang Chen et al.   INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES

Many routes to ferroelectric HfO2: A review of current deposition methods

(2021) Hanan Alexandra Hsain et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application

(2021) Jialin Meng et al.   NANO LETTERS

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer

(2021) Manoj Yadav et al.   NANOTECHNOLOGY

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

(2021) Jun Okuno et al.   IEEE Journal of the Electron Devices Society

Ferroelectrics Based on HfO2 Film

(2021) Chong-Myeong Song et al.   Electronics

Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution

(2020) You-Sheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

Experiment and modeling of dynamical hysteresis in thin film ferroelectrics

(2020) Pengying Chang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Possible electrochemical origin of ferroelectricity in HfO2 thin films

(2020) Maya D. Glinchuk et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Memristor with a ferroelectric HfO2 layer: In which case it is a ferroelectric tunnel junction

(2020) Vitalii Mikheev et al.   NANOTECHNOLOGY

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

A highly CMOS compatible hafnia-based ferroelectric diode

(2020) Qing Luo et al.   Nature Communications

Optimizing the Piezoelectric Strain in ZrO2- and HfO2-Based Incipient Ferroelectrics for Thin-Film Applications: An Ab Initio Dopant Screening Study

(2020) Max Falkowski et al.   ACS Applied Materials & Interfaces

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

(2020) Junghyeon Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs

(2020) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Scale-free ferroelectricity induced by flat phonon bands in HfO2

(2020) Hyun-Jae Lee et al.   SCIENCE

Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges

(2020) Sourav Dutta et al.   Frontiers in Neuroscience

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

(2020) Yuke Zhang et al.   Physical Review Applied

Ferroelectric tunnel junctions with high tunnelling electroresistance

(2020) Xinran Wang et al.   Nature Electronics

Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics

(2020) Alireza Kashir et al.   ADVANCED ENGINEERING MATERIALS

Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

(2020) Damir R. Islamov et al.   APPLIED PHYSICS LETTERS

Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

(2020) Kasidit Toprasertpong et al.   IEEE ELECTRON DEVICE LETTERS

Investigating Ferroelectric Minor Loop Dynamics and History Effect—Part II: Physical Modeling and Impact on Neural Network Training

(2020) Panni Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films

(2020) Ruben Alcala et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

(2020) Furqan Mehmood et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of depolarization electric-field and charge trapping on the coercive voltage of Si:HfO2-based ferroelectric capacitor

(2020) Taehwan Jung et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering

(2020) Youngin Goh et al.   ACS Applied Materials & Interfaces

A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process

(2020) Jixuan Wu et al.   APPLIED PHYSICS LETTERS

Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor

(2020) Pengying Chang et al.   IEEE ELECTRON DEVICE LETTERS

Stabilization of Competing Ferroelectric Phases of HfO2 under Epitaxial Strain

(2020) Yubo Qi et al.   PHYSICAL REVIEW LETTERS

Role of Si Doping in Reducing Coercive Fields for Ferroelectric Switching in HfO2

(2020) Hyemi Yang et al.   Physical Review Applied

Wake‐Up Effect in HfO 2 ‐Based Ferroelectric Films

(2020) Pengfei Jiang et al.   Advanced Electronic Materials

Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films

(2019) Tao Li et al.   ACS Applied Materials & Interfaces

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films

(2019) C. Mart et al.   APPLIED PHYSICS LETTERS

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

(2019) Atanu K. Saha et al.   APPLIED PHYSICS LETTERS

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors With ZrO2 Seed Layers

(2019) Wenwu Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Exploring New Metal Electrodes for Ferroelectric Aluminum-Doped Hafnium Oxide

(2019) Hojoon Ryu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

(2019) Terence Mittmann et al.   Advanced Materials Interfaces

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

(2019) Shi Liu et al.   PHYSICAL REVIEW MATERIALS

Modeling of Negative Capacitance in Ferroelectric Thin Films

(2019) Hyeon Woo Park et al.   ADVANCED MATERIALS

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

(2019) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

(2019) Wenwu Xiao et al.   Nanoscale Research Letters

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

(2019) Mengwei Si et al.   APPLIED PHYSICS LETTERS

The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

(2019) Y. Zhou et al.   COMPUTATIONAL MATERIALS SCIENCE

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

(2019) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

(2019) Cristobal Alessandri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of the Intrinsic Ferroelectricity of HfO2 from ab Initio Molecular Dynamics

(2019) P. Fan et al.   Journal of Physical Chemistry C

On the Origin of the Large Remanent Polarization in La:HfO 2

(2019) Tony Schenk et al.   Advanced Electronic Materials

Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers

(2019) Jordan Bouaziz et al.   APL Materials

Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films

(2019) Yifan Yao et al.   JOURNAL OF APPLIED PHYSICS

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

(2019) Min Hyuk Park et al.   Applied Physics Reviews

Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors

(2018) Halid Mulaosmanovic et al.   ACS Applied Materials & Interfaces

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors

(2018) P. Buragohain et al.   APPLIED PHYSICS LETTERS

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

(2018) Taeho Kim et al.   APPLIED PHYSICS LETTERS

Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics

(2018) N. Gong et al.   APPLIED PHYSICS LETTERS

Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

(2018) Xuan Tian et al.   APPLIED PHYSICS LETTERS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

(2018) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in analog memory-based accelerators for deep learning

(2018) Hsinyu Tsai et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

(2018) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Switching dynamics of ferroelectric Zr-doped HfO2

(2018) Cristobal Alessandri et al.   IEEE ELECTRON DEVICE LETTERS

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fabrication of ferroelectric Fe doped HfO2 epitaxial thin films by ion-beam sputtering method and their characterization

(2018) Takahisa Shiraishi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

(2018) Tae Yoon Lee et al.   ACS Applied Materials & Interfaces

Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering

(2018) Taisei Suzuki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

(2018) Éamon O’Connor et al.   APL Materials

Atomic and electronic structure of ferroelectric La-doped HfO2 films

(2018) T V Perevalov et al.   Materials Research Express

Unexpectedly large energy variations from dopant interactions in ferroelectric HfO2 from high-throughput ab initio calculations

(2018) Max Falkowski et al.   npj Computational Materials

On the origin of enhanced resistive switching behaviors of Ti-doped HfO2 film with nitrogen annealing atmosphere

(2018) Hao Zhou et al.   SURFACE & COATINGS TECHNOLOGY

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model

(2018) Xunzhao Yin et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Electron transport across ultrathin ferroelectric Hf 0.5 Zr 0.5 O 2 films on Si

(2017) A. Chouprik et al.   MICROELECTRONIC ENGINEERING

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

(2017) Fei Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Prediction of new metastable $$\hbox {HfO}_{2}$$ HfO 2 phases: toward understanding ferro- and antiferroelectric films

(2017) S. V. Barabash   Journal of Computational Electronics

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

(2017) Dan Duncan et al.   Physical Review Applied

Antiferroelectric Tunnel Junctions

(2017) Geanina Apachitei et al.   Advanced Electronic Materials

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

(2016) Anna Chernikova et al.   ACS Applied Materials & Interfaces

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits

(2016) Peng Huang et al.   ADVANCED MATERIALS

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

(2016) Mohammad Abuwasib et al.   APPLIED PHYSICS LETTERS

Stabilization of metastable phases in hafnia owing to surface energy effects

(2016) Rohit Batra et al.   APPLIED PHYSICS LETTERS

Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

(2016) A. G. Chernikova et al.   APPLIED PHYSICS LETTERS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors

(2016) Ahmedullah Aziz et al.   IEEE ELECTRON DEVICE LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity of nondoped thin HfO2films in TiN/HfO2/TiN stacks

(2016) Tomonori Nishimura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Deep learning for visual understanding: A review

(2016) Yanming Guo et al.   NEUROCOMPUTING

Annealing behavior of ferroelectric Si-doped HfO2 thin films

(2016) Patrick D. Lomenzo et al.   THIN SOLID FILMS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Thin-film ferroelectric materials and their applications

(2016) Lane W. Martin et al.   Nature Reviews Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

(2015) Wang Kang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Deep learning

(2015) Yann LeCun et al.   NATURE

Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application

(2015) Xun Zhang et al.   Nanoscale Research Letters

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

(2014) S. Starschich et al.   APPLIED PHYSICS LETTERS

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing

(2014) Jing Li et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

About the deformation of ferroelectric hystereses

(2014) T. Schenk et al.   Applied Physics Reviews

Logic Computation in Phase Change Materials by Threshold and Memory Switching

(2013) M. Cassinerio et al.   ADVANCED MATERIALS

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

(2013) Zheng Wen et al.   NATURE MATERIALS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

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Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

(2012) T. Olsen et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Simple Binary ZrO2 and HfO2

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Ferroelectricity in Gd-Doped HfO2Thin Films

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Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions

(2011) Ping Sun et al.   APPLIED PHYSICS LETTERS

Retention mechanism study of the ferroelectric field effect transistor

(2011) Xiao Pan et al.   APPLIED PHYSICS LETTERS

Phase transitions in ferroelectric silicon doped hafnium oxide

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Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

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Ferroelectricity in yttrium-doped hafnium oxide

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(2010) D. Pantel et al.   PHYSICAL REVIEW B

Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration

(2009) Chee-Hong An et al.   APPLIED PHYSICS LETTERS

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

(2009) Chang Yong Kang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

(2009) T. Choi et al.   SCIENCE

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Hardening-softening transition in Fe-doped Pb(Zr,Ti)O3 ceramics and evolution of the third harmonic of the polarization response

(2008) Maxim I. Morozov et al.   JOURNAL OF APPLIED PHYSICS

First-principles study on doping and phase stability ofHfO2

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