TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

The effects of layering in ferroelectric Si-doped HfO2 thin films

(2014) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

(2014) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

(2014) Takao Shimizu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

(2014) Xihong Hao et al.   PROGRESS IN MATERIALS SCIENCE

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

About the deformation of ferroelectric hystereses

(2014) T. Schenk et al.   Applied Physics Reviews

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

(2012) J. Müller et al.   APPLIED PHYSICS LETTERS

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

(2012) Stefan Mueller et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

(2012) Ekaterina Yurchuk et al.   THIN SOLID FILMS

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

Investigations of dopants introduction in hafnia: Electronic properties, diffusion, and their role on the gate leakage current

(2008) Valérie Cuny et al.   JOURNAL OF APPLIED PHYSICS