A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

HfZrO x -Based Switchable Diode for Logic-in-Memory Applications

(2021) Ruei-Wen Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

(2021) Hao-Kai Peng et al.   IEEE ELECTRON DEVICE LETTERS

Logic gates based on neuristors made from two-dimensional materials

(2021) Huawei Chen et al.   Nature Electronics

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

(2020) Chen Pan et al.   Nature Electronics

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

(2019) Zhaohao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In‐Memory Computing

(2019) Long Cheng et al.   ADVANCED FUNCTIONAL MATERIALS

Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar

(2016) Yi Li et al.   ACS Applied Materials & Interfaces

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

(2015) Anne Siemon et al.   ADVANCED FUNCTIONAL MATERIALS

16 Boolean logics in three steps with two anti-serially connected memristors

(2015) Yaxiong Zhou et al.   APPLIED PHYSICS LETTERS

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

Nonvolatile Boolean Logic Block Based on Ferroelectric Tunnel Memristor

(2014) Zhaohao Wang et al.   IEEE TRANSACTIONS ON MAGNETICS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

FeFET Logic Circuits for Operating A 64 kb FeNAND Flash Memory Array

(2012) Xizhen Zhang et al.   INTEGRATED FERROELECTRICS

Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations

(2012) E Linn et al.   NANOTECHNOLOGY

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

The future of microprocessors

(2011) Shekhar Borkar et al.   COMMUNICATIONS OF THE ACM

Room-Temperature Electric-Field Controlled Ferromagnetism in Mn0.05Ge0.95 Quantum Dots

(2010) Faxian Xiu et al.   ACS Nano

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

(2009) Weisheng Zhao et al.   ACM Transactions on Embedded Computing Systems

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS