Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

Title
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 9, Pages 1300-1302
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-07-25
DOI
10.1109/led.2012.2204856

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