Article
Chemistry, Physical
Jing Zhao, Zheng Wei, Xixi Yang, Guangyu Zhang, Zhonglin Wang
Summary: The novel MoS2 nonvolatile memory combined with nanographene as floating gate enables multilevel storage state triggered by both mechanical and optical stimulation without needing extra gate voltages. The device demonstrates high programming/erasing current ratio, performance stability over cycles, and retention time exceeding 105 seconds. The extremely high photoresponsivity of MoS2 optical memory and stable flexibility make it feasible for integrated devices in wearable applications.
Article
Nanoscience & Nanotechnology
Amos Amoako Boampong, Jae-Hyeok Cho, Yoonseuk Choi, Min-Hoi Kim
Summary: The stable multibit storage operation of solution-processed organic nonvolatile memories based on ferroelectric field-effect transistors (FeFETs) for high density data storage devices is demonstrated. The proposed multibit ONVM structure consists of a p-type polymer semiconductor sandwiched between ferroelectric gate insulators, achieving a 2-bit memory representation with clear memory margins. The DG Fe-FeMT has the potential for cost-effective flexible nonvolatile multibit data storage devices due to its solution-process and low annealing temperatures.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Acoustics
Chun-Yu Liao, Kuo-Yu Hsiang, Zhao-Feng Lou, Chen-Ying Lin, Yi-Ju Tseng, Han-Chen Tseng, Zhi-Xian Li, Wei-Chang Ray, Fu-Sheng Chang, Chun-Chieh Wang, Tzu-Chiang Chen, Chih-Sheng Chang, Min-Hung Lee
Summary: An ultralow program/erase voltage is achieved by using an antiferroelectric-ferroelectric field-effect transistor, which provides stable multistate and zero bias data storage.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
(2022)
Article
Chemistry, Physical
Mengmeng Jia, Jinran Yu, Yudong Liu, Pengwen Guo, Ying Lei, Wei Wang, Aifang Yu, Yaxing Zhu, Qijun Sun, Junyi Zhai, Zhong Lin Wang
Summary: This study introduces a new multibit tribotronic nonvolatile memory based on a graphene/hexagonal boron nitride/molybdenum disulfide van der Waals heterostructure and triboelectric nanogenerator, showing promising performance in modulation of programming/erasing states through external mechanical actions, long retention time, stable switching behavior, and multilevel data storage capability. Additionally, a memory inverter circuit utilizing the triboelectric potential as input signals demonstrates the potential of tribotronic devices for various applications in human-robot interactions, self-powered wearable devices, and intelligent instrumentation.
Article
Nanoscience & Nanotechnology
Jiyou Jin, Zhongpu Wang, Zhisheng Peng, Hui Liu, Kang Peng, Haonan Wei, Yu Wang, Yushi Xu, Hang Wei, Weiguo Chu, Yong Jun Li, Lianfeng Sun
Summary: Researchers have successfully achieved stable polarization control of 2D ferroelectric materials through van der Waals heterostructures, demonstrating their potential applications as high-performance memory, rectifiers, and field-effect transistors.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
Ghulam Dastgeer, Sobia Nisar, Aamir Rasheed, Kamran Akbar, Vijay D. Chavan, Deok-kee Kim, Saikh Mohammad Wabaidur, Muhammad Wajid Zulfiqar, Jonghwa Eom
Summary: In this study, a non-volatile floating-gate memory device based on van der Waals heterostructures is presented, which exhibits ultrahigh-speed memory operations and excellent endurance performance, offering promising potential for ultrahigh-density information storage.
Article
Engineering, Electrical & Electronic
Tingfang Tian, Feilong Chen, Zhaokuan Wen, Zhiguo Wang, Yongming Hu, Shengwen Shu
Summary: In this study, Sb2O5-doped AgNbO3 ceramics were prepared and their phase structure, microstructure, dielectric, and ferroelectric properties were investigated. The introduction of Sb5+ ions caused lattice shrinkage and grain size change. The dielectric constant significantly increased with Sb5+ introduction, and the phase transition temperatures shifted to lower temperatures. The AgNb0.98Sb0.02O3 ceramics exhibited relaxor antiferroelectric characteristics, resulting in higher recoverable energy density and energy efficiency compared to pure AgNbO3.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Pejman Ghasemi, Mohammad Javad Sharifi
Summary: This work reports on the fabrication of an optoelectronic memcapacitor by manipulating ferroelectric properties through the ferroelectric-semiconductor interface, showing stable memory states and light-sensitive capacitive characteristics in the device.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Tengfei Hu, Zhengqian Fu, Linlin Zhang, Jiaming Ye, Xuefeng Chen, Genshui Wang, Fangfang Xu
Summary: By controlling beam irradiation in a transmission electron microscope, we have discovered that a buffer area is formed during the antiferroelectric-ferroelectric transition in NaNbO3, which maintains its shape and exhibits a gradual variation of lattice spacing along the proceeding direction of the transition. The presence of this buffer area significantly reduces the overall stress or barrier between the two phases compared to a direct change between the two structures. This finding provides new insights into the dynamic energy-storage process in antiferroelectric materials.
SCRIPTA MATERIALIA
(2023)
Article
Materials Science, Ceramics
Mingyuan Zhao, Jing Wang, Ji Zhang, Li-Feng Zhu, Lei Zhao
Summary: In this study, a multiscale synergistic modulation approach is proposed to improve the energy storage performance of AgNbO3-based materials. The multilayer structure is used to enhance the breakdown strength (E-b), while Sm/Ta doping is employed to enhance the antiferroelectric stability. The Sm/Ta co-doped AN multilayer ceramic capacitor achieves an ultrahigh recoverable energy storage density (W-rec) of 15.0 J·cm(-3) and an energy efficiency of 82.8% at 1500 kV·cm(-1), surpassing the state-of-the-art AN-based ceramic capacitor.
JOURNAL OF ADVANCED CERAMICS
(2023)
Review
Chemistry, Multidisciplinary
Ju Yong Park, Duk-Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung-Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Summary: The research on ferroelectric memories has been limited in the past due to scalability and compatibility issues. However, the discovery of ferroelectricity in certain oxides has revived interest in the field. The potential of inducing nanoscale nonvolatility in gate insulators has been demonstrated. However, technical limitations and variations in reliability need to be addressed for practical applications in various types of devices.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Zhuokun Han, Boyong Zhang, Fenglin Wang, Bingcheng Luo, Shuanhu Wang, Wei Zhai, Jianyuan Wang
Summary: Ferroelectric modulation of photoreponse and electroresistance is demonstrated in Pt/PZT/NSTO heterostructure. The modulation of ferroelectric polarization affects the separation of photogenerated carriers, resulting in a significant change in photocurrent. The ferroelectric polarization and light illumination also modulate the barrier height and width, leading to a change in the resistance ratio.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Meili Xu, Xindong Zhang, Weihao Qi, Shizhang Li, Wei Wang
Summary: Fe-OFET-NVMs offer attractive features for future memory applications, and high-performance top-gate Fe-OFET-NVMs can be achieved by employing a polymer semiconductor channel and self-organized ferroelectric/dielectric gate insulators. The optimized Fe-OFET-NVM exhibits a high mobility, reliable endurance, stable retention capability, and reduced operating voltage, comparable to or better than previous Fe-OFET-NVMs.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Patrick D. Lomenzo, Songrui Li, Lucian Pintilie, Cosmin M. Istrate, Thomas Mikolajick, Uwe Schroeder
Summary: Antiferroelectric random access memory (AFERAM), a new alternative non-volatile memory technology, has high cycling endurance and low operating voltages. By alloying ZrO2 with HfO2, the transition fields associated with antiferroelectric behavior are reduced, resulting in increased switching polarization and memory window. Cycling endurance tests show that the number of cycles is dependent on the amount of Hf-incorporation. Therefore, incorporating Hf into ZrO2 is a feasible method to improve the memory window in ZrO2-based AFERAM.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Pauline Dufour, Thomas Maroutian, Maxime Vallet, Kinnary Patel, Andre Chanthbouala, Charlotte Jacquemont, Lluis Yedra, Vincent Humbert, Florian Godel, Bin Xu, Sergey Prosandeev, Laurent Bellaiche, Mojca Otonicar, Stephane Fusil, Brahim Dkhil, Vincent Garcia
Summary: The antiferroelectric state of 45-nm-thick epitaxial thin films of PbZrO3 is observed through the characteristic structural periodicity of dipoles and the double hysteresis of the polarization-electric field response. A transition to a ferroelectric-like state is found to occur in a large temperature window. Atomistic simulations confirm the presence and origin of the ferroelectric state in the films. Electric-field-induced ferroelectric transitions are detected via piezoresponse force microscopy.
APPLIED PHYSICS REVIEWS
(2023)
Review
Materials Science, Multidisciplinary
Kailimai Su, Yan Wang, Bao Yang, Xu Zhang, Wei Wu, Junwei Lang, Xingbin Yan
Summary: This review provides a comprehensive summary of the important role of pre-lithiation in lithium-ion capacitors (LICs) and the application of cathode sacrificial lithium salts (CSLSs) in pre-lithiation strategies. Various pre-lithiation methods are systematically discussed and compared, highlighting the lithium extraction mechanism of CSLSs and their influence on LICs performance. A summary and outlook are provided to guide the development of new pre-lithiation technologies.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Biochemistry & Molecular Biology
Kai You, Yan Wang, Xiaoxia Chen, Zhen Yang, Yan Chen, Shenglin Tan, Jiawang Tao, Anteneh Getachew, Tingcai Pan, Yingying Xu, Yuanqi Zhuang, Fan Yang, Xianhua Lin, Yinxiong Li
Summary: Serum amyloid A (SAA), mainly produced by hepatocytes, can promote endothelial dysfunction and thrombosis in atherosclerosis and renal disease. The role of SAA in APAP-induced liver toxicity was investigated, and it was found that SAA production was significantly increased in APAP injury model. Blocking SAA protected against APAP-induced liver injuries and improved the survival rate. Further investigations showed that blocking SAA reduced sinusoidal endothelium damage, hemorrhage, and thrombosis. SAA augmented the toxic effect of APAP on liver sinusoidal endothelial cells and promoted platelet aggregation. Inhibition of SAA may be a potential intervention for APAP-induced acute liver injuries.
BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS
(2023)
Editorial Material
Environmental Sciences
Lixin Wang
Summary: A changing climate is causing shifts in vegetation phenology, which in turn may affect the frequency and severity of drought. These changes in phenology also have unexpected consequences for drought recovery trajectories.
NATURE CLIMATE CHANGE
(2023)
Review
Biodiversity Conservation
Ying Sun, Lianhong Gu, Jiaming Wen, Christiaan van Der Tol, Albert Porcar-Castell, Joanna Joiner, Christine Y. Chang, Troy Magney, Lixin Wang, Leiqiu Hu, Uwe Rascher, Pablo Zarco-Tejada, Christopher B. Barrett, Jiameng Lai, Jimei Han, Zhenqi Luo
Summary: This paper discusses the complexity and challenges in remote sensing of Solar-induced chlorophyll fluorescence (SIF) and proposes an analytical framework for inferring terrestrial vegetation structures and functions. The framework can aid in addressing environmental issues across different scales and timeframes.
GLOBAL CHANGE BIOLOGY
(2023)
Review
Biodiversity Conservation
Ying Sun, Jiaming Wen, Lianhong Gu, Joanna Joiner, Christine Y. Chang, Christiaan van Der Tol, Albert Porcar-Castell, Troy Magney, Lixin Wang, Leiqiu Hu, Uwe Rascher, Pablo Zarco-Tejada, Christopher B. Barrett, Jiameng Lai, Jimei Han, Zhenqi Luo
Summary: Despite the growing capabilities of solar-induced chlorophyll fluorescence (SIF) observations, the quality and consistency of SIF datasets is still being researched and developed. The inconsistencies among diverse SIF datasets, along with their widespread applications, have led to contradictory findings. This review synthesizes the variety, scale, and uncertainty of existing SIF datasets, as well as the applications in ecology, agriculture, hydrology, climate, and socioeconomics, highlighting how data inconsistencies and theoretical complexities impact interpretation and contribute to inconsistent findings.
GLOBAL CHANGE BIOLOGY
(2023)
Article
Water Resources
Chao Tian, Lixin Wang, Fadong Li, Xiao Zhang, Wenzhe Jiao, Marie-Gabrielle Medici, Kudzai Farai Kaseke, Daniel Beysens
Summary: This study investigates the isotopic compositions of dew and precipitation to determine the moisture origins under different climatic conditions. The results show that different types of dew have different moisture sources, such as advective dew, groundwater-derived dew, and local-derived dew. This study provides valuable information for predicting future dew trends under climate change.
HYDROLOGICAL PROCESSES
(2023)
Article
Engineering, Electrical & Electronic
Yuan Wang, Yang Yang, Pengfei Jiang, Shuxian Lv, Boping Wang, Yuting Chen, Yaxin Ding, Tiancheng Gong, Bing Chen, Ran Cheng, Xiao Yu, Qing Luo
Summary: In this study, HfO2-based junctionless ferroelectric-gate field effect transistors (FeFETs) and the FeFET NAND memory arrays were proposed and experimentally demonstrated on FDSOI. High performance, including ultra-low leakage (similar to pA) and ultra-high I-PGM/I-ERS ratios (105), can be achieved. Furthermore, the memory functions of the NAND arrays were experimentally demonstrated. FDSOI-based NAND FeFETs will be promising for the next-generation high density, low power memory and edge computing.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Horticulture
Longqiang Bai, Huixin Zhu, Yu Shi, Yaling Li, Yanxiu Miao, Xianchang Yu, Yi Zhang, Yansu Li
Summary: In this study, the potential function of CsGG3.1-2, a splice variant of G? gene CsGG3.1 in cucumber, was investigated. The overexpression of antisense CsGG3.1-2 in transgenic plants resulted in decreased tolerance to chilling stress and alterations in cold stress-related physiological parameters. However, the overexpression of antisense CsGG3.1-2 did not affect the induction of cold-inducible genes. These findings suggest that CsGG3.1-2 affects cold responses via CBF-independent pathways in cucumber and may have a role in regulating carbohydrate metabolism.
Article
Engineering, Electrical & Electronic
Bowen Nie, Yuanquan Huang, Yuan Wang, Yuting Chen, Yaxin Ding, Boping Wang, Yang Yang, Pengfei Jiang, Wei Wei, Tiancheng Gong, Qing Luo
Summary: In order to promote the practical application of ferroelectric devices, a systematic study was conducted on the ferroelectric properties of 10nm HZO capacitors at high temperature application scenarios (300K-400K). It was found that the Pr value decreases with increasing temperature (thermal induced Pr degradation, TIPD), particularly under low electric field operation. In-situ material characterization confirmed that this phenomenon is not caused by phase transition. Further research on trap generation and redistribution through electrical characterization revealed that TIPD is related to the internal electric field (Ebias) caused by charge de-trapping. The deep insight into the underlying mechanism of TIPD provides a useful understanding for advancing the practical application of ferroelectric devices.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Xiaoran Li, Yiming Wang, Yiming Yang, Shidong Lv, Qing Luo, Xinghua Wang, Xiaoxin Xu, Dengyun Lei, Feng Zhang
Summary: In this study, a true random number generator (TRNG) is achieved by utilizing the diffusiveness of resistant states in 3-D resistive random access memory (RRAM) array. The fluctuation of resistance states serves as the random source and is amplified by peripheral ring oscillator (RO) circuits. The fabricated 55-nm CMOS process for the peripheral circuits results in a TRNG that supports a maximum throughput of 1 Gb/s and passes the NIST test across -40°C to 125°C. The proposed TRNG obviates the need for calibration and startup circuits, making it suitable for Internet of Things (IoT) applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Environmental Sciences
Linhua Wang, Matthew Lanning, Lixin Wang, Mengxiao Yu, Shu Ye, Lei Tian, Haw Yen, Junhua Yan
Summary: This study provides direct evidence for the impact of acid deposition on plant transpiration and watershed hydrological processes. The results show that acid deposition enhances plant growth and transpiration, resulting in reduced streamflow at the watershed scale.
COMMUNICATIONS EARTH & ENVIRONMENT
(2023)
Article
Engineering, Electrical & Electronic
Hao Wu, Yong Chen, Yiyang Yuan, Jinshan Yue, Xiangqu Fu, Qirui Ren, Qing Luo, Pui-In Mak, Xinghua Wang, Feng Zhang
Summary: This article proposes a CiM-based SR task accelerator that achieves the coupling of texture sparsity and algorithmic structural sparsity by employing a texture-aware workflow and a dynamic grouping CiM engine. The accelerator utilizes a macro-level pipeline scheme, custom-sized CiM macros, and a high reuse-rate Hadamard transformation circuit to achieve high hardware utilization. Additionally, a novel weight update strategy is devised to reduce performance loss caused by weight updating.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
Article
Engineering, Electrical & Electronic
Yanting Ding, Yu Li, Shujing Jia, Pei Chen, Xumeng Zhang, Wei Wang, Yang Li, Yunxia Hao, Jinshun Bi, Tiancheng Gong, Hao Jiang, Ming Wang, Qi Liu, Ningsheng Xu, Ming Liu
Summary: The degradation behavior of a nanoscale forming-free TiN/NbOx/TiN memristor, including the shift of switching voltages and the shrink of voltage window, is investigated in this study. It is found that the increase of electrode resistance due to oxygen vacancy accumulation leads to the increase of switching voltages and the shrink of voltage window. A reverse refresh strategy is proposed based on the elucidated degradation mechanisms to extend the endurance and delay the degradation of voltage window.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu
Summary: This study presents a high-performance 9 Mb HZO-based nonvolatile FeRAM chip with integrated TiN/HZO/TiN ferroelectric capacitor. The chip utilizes a temperature-aware ECC-assisted write driver and offset-canceled sense amplifier to enhance reliability and power efficiency.
IEEE JOURNAL OF SOLID-STATE CIRCUITS
(2023)
Article
Engineering, Electrical & Electronic
Xiangqu Fu, Qirui Ren, Hao Wu, Feibin Xiang, Qing Luo, Jinshan Yue, Yong Chen, Feng Zhang
Summary: This article introduces P-3 ViT, a computing-in-memory (CIM)-based architecture for efficiently accelerating vision transformer models. P-3 ViT overcomes challenges in redundant data storage, matrix transposition, and sparse acceleration schemes, achieving higher energy efficiency and speed compared to traditional accelerators. The key contributions include three ping-pong pipeline scheduling modes, a two-way ping-pong CIM macro, and a small prediction network.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
