A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Published 2018 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 1, Pages 15-18
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-11-23
DOI
10.1109/led.2017.2776263

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.