Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films
Published 2022 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 9, Pages 5297-5301
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2022-07-21
DOI
10.1109/ted.2022.3190256
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution
- (2022) Joonbong Lee et al. Advanced Materials Interfaces
- Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy
- (2022) Wassim Hamouda et al. APPLIED PHYSICS LETTERS
- Possible electrochemical origin of ferroelectricity in HfO2 thin films
- (2020) Maya D. Glinchuk et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study
- (2020) Atanu K. Saha et al. Scientific Reports
- Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
- (2020) Jike Lyu et al. APPLIED PHYSICS LETTERS
- Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
- (2020) Furqan Mehmood et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Polarization switching in thin doped HfO2 ferroelectric layers
- (2020) Monica Materano et al. APPLIED PHYSICS LETTERS
- Wake‐Up Effect in HfO 2 ‐Based Ferroelectric Films
- (2020) Pengfei Jiang et al. Advanced Electronic Materials
- Modeling of Negative Capacitance in Ferroelectric Thin Films
- (2019) Hyeon Woo Park et al. ADVANCED MATERIALS
- Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study
- (2019) Wei Wei et al. APPLIED PHYSICS LETTERS
- The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle
- (2019) Y. Zhou et al. COMPUTATIONAL MATERIALS SCIENCE
- Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation
- (2019) D.R. Islamov et al. MICROELECTRONIC ENGINEERING
- Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering
- (2019) Terence Mittmann et al. Advanced Materials Interfaces
- Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
- (2018) P. Buragohain et al. APPLIED PHYSICS LETTERS
- Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
- (2018) Damir R. Islamov et al. ACTA MATERIALIA
- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
- (2016) Michael Hoffmann et al. ADVANCED FUNCTIONAL MATERIALS
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
- (2016) S. Starschich et al. APPLIED PHYSICS LETTERS
- Effect of Vegard strains on the extrinsic size effects in ferroelectric nanoparticles
- (2014) Anna N. Morozovska et al. PHYSICAL REVIEW B
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Dynamics of polarization reversal in virgin and fatigued ferroelectric ceramics by inhomogeneous field mechanism
- (2010) Sergey Zhukov et al. PHYSICAL REVIEW B
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now