The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

Title
The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle
Authors
Keywords
Ferroelectric film, Hafnium oxide, Oxygen vacancies, First-principle
Journal
COMPUTATIONAL MATERIALS SCIENCE
Volume 167, Issue -, Pages 143-150
Publisher
Elsevier BV
Online
2019-05-27
DOI
10.1016/j.commatsci.2019.05.041

Ask authors/readers for more resources

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started