On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2

(2018) Everett D. Grimley et al.   Advanced Materials Interfaces

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

(2018) Franz P. G. Fengler et al.   Advanced Electronic Materials

Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performance

(2017) Terence Mittmann et al.   MICROELECTRONIC ENGINEERING

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

(2017) Fei Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

(2015) Chao Li et al.   Nano Research

Prospective of Semiconductor Memory Devices: from Memory System to Materials

(2015) Cheol Seong Hwang   Advanced Electronic Materials

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

(2011) L. Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization fatigue in ferroelectric thin films and related materials

(2009) X. J. Lou   JOURNAL OF APPLIED PHYSICS

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films

(2009) W. Weinreich et al.   MICROELECTRONIC ENGINEERING

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B