Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

Published 2016 View Full Article

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Title
Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 9, Pages 1123-1126
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-07-21
DOI
10.1109/led.2016.2593627

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