Article
Multidisciplinary Sciences
Tongguang Yu, Yixin Xu, Shan Deng, Zijian Zhao, Nicolas Jao, You Sung Kim, Stefan Duenkel, Sven Beyer, Kai Ni, Sumitha George, Vijaykrishnan Narayanan
Summary: This paper proposes an efficient hardware encryption technique based on FeFET active interconnects, with minimal complexity and overheads. The proposed logic acts as a hardware encryption key and enables encoding and decoding without affecting critical path timing delay. A peripheral programming scheme for reconfigurable logic is also proposed. Experimental results show good performance in various aspects.
NATURE COMMUNICATIONS
(2022)
Review
Chemistry, Multidisciplinary
Mikhail Tarkov, Fedor Tikhonenko, Vladimir Popov, Valentin Antonov, Andrey Miakonkikh, Konstantin Rudenko
Summary: This article introduces the concepts of in-memory computing and content-addressable memory. It discusses the issues of constructing binary and ternary content-addressable memory based on ferroelectric devices. A review of ferroelectric materials and devices is also presented.
Article
Engineering, Electrical & Electronic
Eunseon Yu, Amogh Agrawal, Dongqi Zheng, Mengwei Si, Minsuk Koo, Peide D. Ye, Sumeet Kumar Gupta, Kaushik Roy
Summary: Coupled-oscillatory networks using ferroelectric field-effect transistors (FeFETs) are shown to be energy-efficient and effective for optimization tasks. The FeFET oscillator circuits with optimized biasing schemes achieve wider synchronization range and significantly lower energy consumption compared to previous FeFET-based oscillators. FeFET coupled-oscillatory network also demonstrates promising performance in edge detection tasks, closely following the ideal output with consideration of non-idealities and process variations.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Dominik Kleimaier, Halid Mulaosmanovic, Stefan Dunkel, Sven Beyer, Steven Soss, Stefan Slesazeck, Thomas Mikolajick
Summary: This study systematically compared p-type FeFETs based on HfO2 and n-type FeFETs embedded in GlobalFoundries 28 nm HKMG technology, finding that they exhibit similar switching behavior but significantly different trapping kinetics. P-FeFETs show a full memory window immediately after the write operation, while n-FeFETs exhibit parasitic electron trapping.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Franz Mueller, Sourav De, Ricardo Olivo, Maximilian Lederer, Abdelrahman Altawil, Raik Hoffmann, Thomas Kaempfe, Tarek Ali, Stefan Duenkel, Halid Mulaosmanovic, Johannes Mueller, Sven Beyer, Konrad Seidel, Gerald Gerlach
Summary: This letter reports the MLC operation of FeFETs arranged in AND-connected memory arrays with a 4% BER when writing a random data pattern. The FeFETs with HfO2 were embedded in GlobalFoundries 28 nm bulk HKMG technology and are based on an MFIS stack. The direct field influence of the ferroelectric layer on the Si-channel current percolation paths results in device-to-device variation and contributes to the asymmetry in programming and erasing progression. Write schemes and state-preserving inhibit schemes are evaluated for array operation to cope with the influence of the CPPs. Finally, this enables the utilization of FeFETs' MLC capabilities, enhancing the storage density of 1T memory cells on the array level.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Duenkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni
Summary: This study proposes a read disturb-free dual-port ferroelectric field-effect transistor (FeFET) to address the limitations of single-port FeFET. By performing write and read operations on separate gates, the read disturb issue is eliminated and the stability of the device is improved. Experimental results indicate that the dual-port FeFET has great potential for various applications.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Hao-Tung Chung, Wei-Shuo Li, Chun-Yu Liao, Pin-Guang Chen, Kuan-Neng Chen, Min-Hung Lee, Huang-Chung Cheng
Summary: By modifying the O-2 plasma period in PE-ALD, the undoped-HfO2 FeFET demonstrates enhanced remnant polarization and successful integration.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Mor Mordechai Dahan, Halid Mulaosmanovic, Or Levit, Stefan Dunkel, Sven Beyer, Eilam Yalon
Summary: The discovery of ferroelectric doped HfO2 enables the development of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology, which has the potential to meet the demand for fast, low-power, low-cost, and high-density nonvolatile memory and neuromorphic devices. This study demonstrates that a single subnanosecond pulse can fully switch HfO2-based FeFET, revealing the high-speed capabilities of FeFETs and shedding light on the fundamental polarization switching speed limits and kinetics.
Article
Nanoscience & Nanotechnology
W. L. Sarney, A. L. Glasmann, J. S. Pearson, C. K. McGinn, P. M. Litwin, R. S. Bisht, S. Ramanathan, S. J. McDonnell, C. A. Hacker, S. Najmaei
Summary: HZO-based FeFETs are promising devices for embedded memory and in-memory computing architectures. The HZO films exhibit ferroelectricity without the need for field processing, and have significant remnant polarization and coercive field. The grain size of HZO closely follows the size of ferroelectric domains. Integration with WSe2 shows robust synaptic plasticity within a wide range of conductivity.
MATERIALS TODAY NANO
(2023)
Article
Chemistry, Multidisciplinary
Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, Yi-Wen Lin, Yi-Ju Yao, Yung-Chun Wu
Summary: The use of trench structures in ferroelectric Fin field-effect transistors improved electrical characteristics and suppressed short channel effects, resulting in higher performance compared to conventional FinFETs.
Article
Engineering, Electrical & Electronic
Sourabh Jindal, Sanjeev Kumar Manhas, Satendra Kumar Gautam, Simone Balatti, Arvind Kumar, Mahendra Pakala
Summary: In this article, the impact of device scaling of FeFET down to 22 nm on memory performance and reliability is investigated in detail using experimentally calibrated data. The study reveals lateral nonuniformity in the polarization of the ferroelectric layer along the channel, which is attributed to scaling effects. Gate-length scaling results in opposite trends in remnant polarization for program and erase states, as well as a significant increase in the electric field across the interfacial layer for the erase state, posing reliability concerns. Despite these challenges, gate-length scaling achieves a relatively stable memory window by counter-balancing the effects of positive and negative remnant polarization.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Siao-Cheng Yan, Guan-Min Lan, Chong-Jhe Sun, Ya-Han Chen, Chen-Han Wu, Hao-Kai Peng, Yu-Hsien Lin, Yung-Hsien Wu, Yung-Chun Wu
Summary: In this study, HfZrO2 ferroelectric fin field-effect transistors were fabricated and demonstrated excellent performance in terms of memory window, retention time, compatibility with current FinFET process, and reliability. These Fe-FinFETs are considered promising candidates for high-density ferroelectric field-effect transistor memory applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, Kitae Lee, Sihyun Kim, Sangwook Youn, Yeongjin Hwang, Hyungjin Kim, Rino Choi, Daewoong Kwon
Summary: In this study, a HZO ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate for MHz synaptic device applications. The FeFETs demonstrated stable multistate weights, excellent retention, and symmetric potentiation/depression (P/D). A novel incremental drain-voltage-ramping method was proposed to improve the linearity and symmetry of the P/D, and its compatibility was thoroughly verified. The results showed that the FeFETs achieved a linear and symmetric P/D with stable repeatability under a wide range of operating conditions, and achieved a learning accuracy of 95% in MNIST pattern recognition simulations.
IEEE ELECTRON DEVICE LETTERS
(2022)
Review
Computer Science, Information Systems
Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin
Summary: This review presents the potential of hafnium oxide-based ferroelectric field-effect-transistors (FeFET) for post-Moore integrated circuit innovations and discusses recent research progress in hafnium oxide-based ferroelectric films, device integration, and applications.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Chemistry, Multidisciplinary
Suhas Yadav, Atanu Samanta, Or Shafir, Ilya Grinberg
Summary: Prediction of material properties from composition is crucial in materials science, especially for ferroelectric perovskite oxide solid solutions. A multilevel model has been developed to predict the properties of PbTiO3-derived ferroelectric solid solutions, providing a unified and quantitatively predictive theory.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
C-M Yen, S-Y Chang, K-C Chen, Y-J Feng, L-H Chen, B-Z Liao, M-H Lee, S-C Chen, M-H Liao
Summary: In this study, high-quality carbon nanotubes (CNTs) were grown using gas ferrocene as a reactant in high aspect ratio trench structures, making it a promising material for through-silicon vias (TSVs) in three-dimensional (3-D) stacking technologies. The demonstrated process flow, including CNT growth, chemical-mechanical planarization (CMP), and wafer temporary bonding, offers flexibility for integrating high-density devices with CNTs as TSVs for 3-D connections.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Acoustics
Chun-Yu Liao, Kuo-Yu Hsiang, Zhao-Feng Lou, Chen-Ying Lin, Yi-Ju Tseng, Han-Chen Tseng, Zhi-Xian Li, Wei-Chang Ray, Fu-Sheng Chang, Chun-Chieh Wang, Tzu-Chiang Chen, Chih-Sheng Chang, Min-Hung Lee
Summary: An ultralow program/erase voltage is achieved by using an antiferroelectric-ferroelectric field-effect transistor, which provides stable multistate and zero bias data storage.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
(2022)
Article
Engineering, Electrical & Electronic
C. -Y. Liao, K. -Y. Hsiang, C. -Y. Lin, Z. -F. Lou, Z. -X. Li, H. -C. Tseng, F. -S. Chang, W. -C. Ray, C. -C. Wang, J. -Y. Lee, P. -H. Chen, J. -H. Tsai, M. -H. Liao, M. H. Lee
Summary: Experimental insights into the reverse switching charge of antiferroelectric Hf0.1Zr0.9O2 are validated using pulse measurement and capacitance-voltage (C-V) analysis. The difference between saturation polarization (P-S) and remnant polarization (P-r) plays a crucial role and is confirmed by the steep and gradual slope of the P-V loop formed by antiferroelectric (AFE) and antiferroelectric-dielectric (AFE-DE) structures respectively. AFE capacitors exhibit significantly higher released charge (Q(D)) compared to AFE-DE bilayers due to the strong reverse switching of the P-S and P-r difference. A non-hysteretic Q(D) scheme is proposed by alternating bipolar AFE operation without a dielectric layer to achieve bidirectional enhancement.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
K-C Chen, Nilabh Basu, S-C Chen, M-H Lee, M-H Liao
Summary: This paper investigates the advantages of carbon nanotubes as TSV filling material, proposes an equivalent circuit model for CNTs TSV, and simulates the electrical behaviors. The research finds that CNTs TSV has lower frequency-dependent loss at high-speed transmission frequency.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
K-Y Hsiang, C-Y Liao, J-H Liu, C-Y Lin, J-Y Lee, Z-F Lou, F-S Chang, W-C Ray, Z-X Li, H-C Tseng, C-C Wang, M. H. Liao, T-H Hou, M. H. Lee
Summary: The feasibility of a bilayer antiferroelectric tunneling junction (FTJ) is demonstrated, showing its compatibility with NAND and its potential for multilevel operations. The proposed vertical FTJ has the potential to meet the high demands of emerging high-density memory and computing-in-memory (CiM) in the future.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
K. -Y. Hsiang, J. -Y. Lee, Z. -F. Lou, F. -S. Chang, Y. -C. Chen, Z. -X. Li, M. H. Liao, C. W. Liu, T. -H. Hou, P. Su, M. H. Lee
Summary: Opposite polarity cycling recovery (OPCR) technique is proposed to restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, extending the endurance of AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling achieves unlimited endurance, and experimental results demonstrate that unipolar cycling with OPCR can accumulate 1012 cycles while maintaining nondegradation and complete restoration of remnant polarization (P-r). Furthermore, OPCR achieves a recovery time ratio of 0% (trecovery/tperiod), indicating no additional time is required for the recovery procedure.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Y. -c. Chan, Nilabh Basu, T. -w. Chen, Y. -t. Tsai, H. -y. Lin, S. -c. Chen, M. -h. Lee, M. -h. Liao
Summary: This study presents an equivalent circuit model for carbon nanotubes (CNTs) as through silicon via (TSV) filling material, and investigates the electrical performance of multiwall CNTs in a multilayer stacking system under different operating temperatures. The results show that CNT TSV has more advantages than conventional filling material, copper, at high temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Hong-Yi Lin, Nilabh Basu, Min-Hung Lee, Sheng-Chi Chen, Ming-Han Liao
Summary: This study proposes and investigates a double catalytic layer scheme for the low temperature growth of carbon nanotubes (CNTs) on Co, Al, and Ti catalysts on a silicon substrate. The good quality of the CNTs is demonstrated through SEM and Raman spectroscopy analyses. This study contributes to the ongoing research on integrating semiconductors into packaging and power-related applications, evidenced by the low resistance (about 128 Omega) and high thermal conductivity (about 29.8 Wm(-1) K-1) of the developed CNTs.
Article
Engineering, Electrical & Electronic
Y. -T. Tsai, Nilabh Basu, T. -W. Chen, Y. -C. Chan, H. -Y. Lin, S. -C. Chen, M. -H. Lee, M. -H. Liao
Summary: In this study, the contact resistance between CNTs and different metal electrodes (In, Cr, Cu, Ni, W, and Bi) grown by two methods (FCCVD and thin Fe metal CVD) was investigated. The results showed that CNTs grown by FCCVD had lower contact resistance compared to those grown by thin Fe metal CVD. The low contact resistance was attributed to the avoidance of metal-silicide formation between Si substrate and the metal catalyst film in FCCVD. Additionally, FCCVD resulted in higher CNT density in TSVs and reduced contact resistance, demonstrating its potential for 3-DICs. The use of metals with good wettability such as Bi also helped in reducing contact resistance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Yi-Chuan Chen, Yu-Chen Chen, Kuo-Yu Hsiang, Min-Hung Lee, Pin Su
Summary: In this study, the performance of Antiferroelectric-RAM (AFeRAM) under low temperature operation was evaluated. By using a nucleation limited switching (NLS)-based AFE model calibrated with experimental data from AFE HZO (Hf0.1Zr0.9O2), the operation of AFeRAM cells was investigated from 80K to 300K. The study suggests that operating AFeRAM at low temperatures may enhance sensing margin, read/write time, and energy efficiency.
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM
(2023)
Proceedings Paper
Computer Science, Interdisciplinary Applications
Siddheswar Maikap, Asim Senapati, Zhao-Feng Lou, Min-Hung Lee
Summary: The sputter deposited Si-based interfacial layer (IL) in the Ru/SiON(IL)/HZO/TiN structure exhibits a long endurance of more than 10(10) cycles, which is significantly higher than the 107 cycles for the memory without IL. The presence of controlled oxygen vacancy in the HZO film and oxygen in the SiON IL, as observed by the shift in coercive field (E-c), results in a good o-phase and lower leakage current, leading to a good 2Pr value of more than 28 mu C/cm(2).
2023 SILICON NANOELECTRONICS WORKSHOP, SNW
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Yu-Chen Chen, Kuo-Yu Hsiang, Min-Hung Lee, Pin Su
Summary: In this study, we have used NLS-based modeling and characterization to investigate the antiferroelectric/ferroelectric (AFE/FE) properties of Hf1-xZrxO2 (HZO) at low temperatures down to 80K. Our generalized NLS model successfully captures the temperature-dependent phase transition behavior of AFE/FE HZO, which explains the observed temperature dependence of polarization. The distributions and temperature dependences of the back-switching field and effective activation field are found to be crucial. Our model is significant for HZO with specific AFE and FE properties, providing potential benefits for future memory applications.
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT
(2023)
Proceedings Paper
Engineering, Multidisciplinary
K. -Y. Hsiang, J. -Y. Lee, Z. -F. Lou, F. -S. Chang, Z. -X. Li, C. W. Liu, T. -H. Hou, P. Su, M. H. Lee
Summary: The cryogenic endurance of AFE and FE Hf1-xZrxO2 capacitors was investigated for approximately 10^10 cycles (80K). Furthermore, the AFE capacitor exhibited a high speed response with approximately 80% normalized switching 2Pr,sw for tp=1μs compared to approximately 60% for the FE capacitor at 80K.
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
(2023)
