- Home
- Publications
- Publication Search
- Publication Details
Title
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 10, Pages 102902
Publisher
AIP Publishing
Online
2018-03-07
DOI
10.1063/1.5017094
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Kinetic pathway of the ferroelectric phase formation in doped HfO2 films
- (2017) Lun Xu et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale
- (2017) Rama K. Vasudevan et al. Applied Physics Reviews
- Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
- (2016) Anna Chernikova et al. ACS Applied Materials & Interfaces
- Ferroelectric phase stabilization of HfO2by nitrogen doping
- (2016) Lun Xu et al. Applied Physics Express
- Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy
- (2015) Nina Balke et al. ACS Nano
- Ferroelectricity in undoped hafnium oxide
- (2015) Patrick Polakowski et al. APPLIED PHYSICS LETTERS
- Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium
- (2015) Patrick D. Lomenzo et al. IEEE ELECTRON DEVICE LETTERS
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
- (2014) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
- (2012) Stefan Mueller et al. ADVANCED FUNCTIONAL MATERIALS
- Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
- (2012) T. Olsen et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films
- (2012) F. Griggio et al. PHYSICAL REVIEW LETTERS
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
- Ferroelectricity in Gd-Doped HfO2Thin Films
- (2012) S. Mueller et al. ECS Journal of Solid State Science and Technology
- Phase transitions in ferroelectric silicon doped hafnium oxide
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
- (2011) J. Müller et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
- Solid-state memories based on ferroelectric tunnel junctions
- (2011) André Chanthbouala et al. Nature Nanotechnology
- Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films
- (2009) Michael Shandalov et al. JOURNAL OF APPLIED PHYSICS
- Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
- (2009) A. Gruverman et al. NANO LETTERS
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started