Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory

Published 2021 View Full Article

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Title
Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Processing in Memory
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 11, Pages 1607-1610
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-09-30
DOI
10.1109/led.2021.3116797

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