Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

(2013) Dominik Martin et al.   SOLID-STATE ELECTRONICS

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

(2012) T. Olsen et al.   APPLIED PHYSICS LETTERS

A beginner's guide to the modern theory of polarization

(2012) Nicola A. Spaldin   JOURNAL OF SOLID STATE CHEMISTRY

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

(2012) Ekaterina Yurchuk et al.   THIN SOLID FILMS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in yttrium-doped hafnium oxide

(2011) J. Müller et al.   JOURNAL OF APPLIED PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

(2009) S. P. Beckman et al.   PHYSICAL REVIEW B