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Title
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Authors
Keywords
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Journal
SCIENCE
Volume -, Issue -, Pages eaba0067
Publisher
American Association for the Advancement of Science (AAAS)
Online
2020-07-03
DOI
10.1126/science.aba0067
References
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- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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- VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data
- (2011) Koichi Momma et al. JOURNAL OF APPLIED CRYSTALLOGRAPHY
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- (2010) Sandeep Kumar et al. PHYSICAL REVIEW B
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- (2008) J. Y. Son et al. JOURNAL OF APPLIED PHYSICS
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- (2007) R. Terki et al. MATERIALS LETTERS
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