Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

Authors

Keywords

Journal

Volume 41, Issue 10, Pages 1588-1591

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2020-08-26

DOI

10.1109/led.2020.3019265

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