Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
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Title
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 24, Pages 242905
Publisher
AIP Publishing
Online
2016-06-14
DOI
10.1063/1.4953787
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Related references
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- Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic-layer deposition
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- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
- High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition
- (2011) Flora M. Li et al. APPLIED PHYSICS LETTERS
- Phase transitions in ferroelectric silicon doped hafnium oxide
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in yttrium-doped hafnium oxide
- (2011) J. Müller et al. JOURNAL OF APPLIED PHYSICS
- Cubic-Structured $\hbox{HfO}_{2}$ With Optimized Doping of Lanthanum for Higher Dielectric Constant
- (2009) Wei He et al. IEEE ELECTRON DEVICE LETTERS
- First-principles study on doping and phase stability ofHfO2
- (2008) Choong-Ki Lee et al. PHYSICAL REVIEW B
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