Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing

Published 2021 View Full Article

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Title
Impact of Random Phase Distribution in Ferroelectric Transistors-Based 3-D NAND Architecture on In-Memory Computing
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 5, Pages 2543-2548
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-04-01
DOI
10.1109/ted.2021.3068086

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