Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

Published 2019 View Full Article

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Title
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 9, Pages 3828-3833
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-08-09
DOI
10.1109/ted.2019.2930749

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