Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

(2018) Anastasia Chouprik et al.   ACS Applied Materials & Interfaces

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

(2018) Glen Walters et al.   APPLIED PHYSICS LETTERS

Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

(2018) Han Bi et al.   APPLIED PHYSICS LETTERS

Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

(2018) Jing Xu et al.   APPLIED PHYSICS LETTERS

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

(2018) Taeho Kim et al.   APPLIED PHYSICS LETTERS

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

(2018) Ava J. Tan et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors

(2018) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx

(2018) Jing Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

(2018) Taeho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

(2018) Shinji Migita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2

(2018) T. V. Perevalov et al.   JETP LETTERS

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

(2018) Zhipeng Dong et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2

(2018) T V Perevalov et al.   NANOTECHNOLOGY

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor

(2018) Kyungmin Jang et al.   IEEE Journal of the Electron Devices Society

Design Space Exploration of Hysteresis-Free HfZrOx-Based Negative Capacitance FETs

(2017) Ankit Sharma et al.   IEEE ELECTRON DEVICE LETTERS

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

(2017) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates

(2017) Takahisa Shiraishi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electron transport across ultrathin ferroelectric Hf 0.5 Zr 0.5 O 2 films on Si

(2017) A. Chouprik et al.   MICROELECTRONIC ENGINEERING

Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performance

(2017) Terence Mittmann et al.   MICROELECTRONIC ENGINEERING

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

(2017) Felicia A. McGuire et al.   NANO LETTERS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Very large phase shift of microwave signals in a 6 nm Hf x Zr1−x O2 ferroelectric at ±3 V

(2017) Mircea Dragoman et al.   NANOTECHNOLOGY

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

(2017) Young Hwan Lee et al.   NANOTECHNOLOGY

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5 Zr0.5 O2 -based ferroelectric MIM structures

(2017) M. G. Kozodaev et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

(2017) Yuxing Li et al.   IEEE Journal of the Electron Devices Society

Fluorine-Free Oil Absorbents Made from Cellulose Nanofibril Aerogels

(2016) Arie Mulyadi et al.   ACS Applied Materials & Interfaces

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Induction of ferroelectricity in nanoscale ZrO 2 /HfO 2 bilayer thin films on Pt/Ti/SiO 2 /Si substrates

(2016) Y.W. Lu et al.   ACTA MATERIALIA

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2Thin Films

(2016) Min Hyuk Park et al.   ADVANCED MATERIALS

Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

(2016) Sergei Zarubin et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2thin films

(2016) Min Hyuk Park et al.   Nanoscale

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

(2016) S. Riedel et al.   AIP Advances

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   JETP LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor

(2015) Yong Yan et al.   JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

(2015) A. Chernikova et al.   MICROELECTRONIC ENGINEERING

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

A highly efficient flexible dye-sensitized solar cell based on nickel sulfide/platinum/titanium counter electrode

(2015) Gentian Yue et al.   Nanoscale Research Letters

Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

(2015) Min Hung Lee et al.   IEEE Journal of the Electron Devices Society

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2thin film on Ir electrode

(2014) Takao Shimizu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS