Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
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Title
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf
0.5
Zr
0.5
O
2
Thin Films
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume -, Issue -, Pages 2000281
Publisher
Wiley
Online
2020-09-17
DOI
10.1002/pssa.202000281
References
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Related references
Note: Only part of the references are listed.- Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
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- (2015) M. H. Park et al. Journal of Materials Chemistry C
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- (2012) Johannes Müller et al. NANO LETTERS
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- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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- (2008) K. R. Udayakumar et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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