Article
Nanoscience & Nanotechnology
Hongrae Joh, Minhyun Jung, Junghyeon Hwang, Youngin Goh, Taeseung Jung, Sanghun Jeon
Summary: The proposed low-temperature annealing method for crystallization of Hf0.5Zr0.5O2 (HZO) thin films using focused microwave induced annealing technique shows promising results, allowing for the integration of HZO ferroelectric films on flexible substrates with robust ferroelectric properties.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Changhyeon Han, Jiyong Yim, An Nguyen, Jeonghan Kim, Ki Ryun Kwon, Sangwoo Kim, Soi Jeong, Eun Chan Park, Ji Won You, Rino Choi, Daewoong Kwon
Summary: The ferroelectric properties of Hf0.5Zr0.5O2 (HZO) are analyzed by inserting various interlayers (ILs) underneath HZO in capacitors and ferroelectric thin-film-transistors (FeTFTs) with all-sputter-deposited metal/HZO/IL/Si (MFIS) stacks. Only the MFIS stack with a TiOx IL exhibits polarization switching due to the polarizability of TiOx through the movement of oxygen vacancies (OVs). The insertion of TiOx IL results in a wide (3.4-V) memory window in the FeTFTs by suppressing the leakage current and accelerating the polarization switching of HZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Changhyeon Han, Ki Ryun Kwon, Jeonghan Kim, Jiyong Yim, Sangwoo Kim, Eun Chan Park, Ji Won You, Soi Jeong, Rino Choi, Daewoong Kwon
Summary: Ferroelectric memories composed of all-sputtered films were fabricated, and the ferroelectric properties of sputtered Hf0.5Zr0.5O2 (HZO) were analyzed by modulating the amount and location of oxygen vacancies (OVs). It was found that reducing the OV content through O2 annealing could suppress leakage current and improve the memory window and on-off ratio of the ferroelectric tunneling junction (FTJ) memory by reducing trap-assisted tunneling (TAT) near the OV injection site.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Dipjyoti Das, Batzorig Buyantogtokh, Venkateswarlu Gaddam, Sanghun Jeon
Summary: This study conducted an in-depth analysis on the role of high-pressure annealing conditions on HZO capacitors in metal-ferroelectric-metal structure, finding that HZO demonstrates highest ferroelectricity at 1:3 Hf:Zr ratio. Increasing high-pressure annealing temperature and pressure enhances ferroelectric phase formation and improves ferroelectric properties in HZO.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
Luis Azevedo Antunes, Richard Ganser, Uwe Schroeder, Thomas Mikolajick, Alfred Kersch
Summary: The phase composition of HZO thin films is crucial for their ferroelectric and electrical properties, but optimizing the phase formation is a challenge due to the complex influencing variables. The Curie temperature is an important parameter that depends on Zr content, oxygen-related defects, layer thickness, and external stress. A two-step process of phase formation involving kinetic transformation and nucleation is proposed. A modified nucleation model with consideration of polycrystalline structure and rescaled interface energies is used to calculate phase fractions and analyze the causes of undesired monoclinic phase.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Fan Zhang, Zheng-Dong Luo, Qiyu Yang, Jiuren Zhou, Jin Wang, Zhaohao Zhang, Qikui Fan, Yue Peng, Zhenhua Wu, Fei Liu, Shiyou Chen, Dongsheng He, Huaxiang Yin, Genquan Han, Yan Liu, Yue Hao
Summary: Doped HfO2 thin films exhibit robust ferroelectricity and have the potential to enable ultralow-power logic and memory devices even with aggressive thickness scaling. The coupling mechanism between the dynamic change of the interfacial layer and wake-up/fatigue phenomena in ferroelectric Hf1-xZrxO2 (HZO) thin films is demonstrated. The electrical properties of HZO devices can be manipulated by controlling the interface properties. These findings are important for improving the reliability of HZO-based ferroelectric devices through interface engineering.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Multidisciplinary
Dao Wang, Yan Zhang, Yongbin Guo, Zhenzhen Shang, Fangjian Fu, Xubing Lu
Summary: This study investigates the impact of crystallization annealing on the electrical, ferroelectric, and reliability properties of HfO2-based ferroelectric thin films. The results show that annealing at a low temperature suppresses the formation of unwanted phase and reduces leakage current, leading to improved ferroelectric properties.
Article
Engineering, Electrical & Electronic
Yeongseok Jeong, Venkateswarlu Gaddam, Youngin Goh, Hunbeom Shin, Sangho Lee, Giuk Kim, Sanghun Jeon
Summary: Hafnia-based ferroelectric materials have recently gained significant attention for future electronic devices. This study reports a high imprinting effect in bilayer stack capacitors by using an optimal TaO insertion layer and high-pressure annealing. The source of the imprint field was found to be tantalum suboxides with doubly positively charged oxygen vacancies. These findings provide a new strategy to enhance the functionality of hafnia-based ferroelectric devices in the future.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Qin Wang, Yefan Zhang, Peng Yang, Rongrong Cao, Haijun Liu, Hui Xu, Sen Liu, Qingjiang Li
Summary: This study utilizes the high-pressure annealing process to improve the symmetry and ferroelectricity of hafnium-based ferroelectric capacitors, addressing the issues of device asymmetry and reliability.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Manh-Cuong Nguyen, Sihyun Kim, Kitae Lee, Ji-Yong Yim, Rino Choi, Daewoong Kwon
Summary: The HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) fabricated on a silicon-on-insulator substrate showed improved performance and durability after high-pressure forming gas annealing, leading to superior endurance exceeding 10(10) cycles and robust retention behavior. Appropriate thermal treatment for the interlayer and ferroelectric material significantly enhanced FeFET performance and reliability.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Bo Chen, Chengcheng Wang, Xuepeng Zhan, Shuhao Wu, Lu Tai, Junyao Mei, Jixuan Wu, Jiezhi Chen
Summary: This paper investigates sub-10 nm ferroelectric capacitors based on HfZrO film and finds that varying component capacitors have similar remnant polarization but a lower coercive electric field, enabling partial domain switching at lower pulse amplitude and width, which is essential for emulating typical synaptic features.
Article
Engineering, Electrical & Electronic
Chen Sun, Zijie Zheng, Kaizhen Han, Subhranu Samanta, Jiuren Zhou, Qiwen Kong, Jishen Zhang, Haiwen Xu, Annie Kumar, Chengkuan Wang, Xiao Gong
Summary: The temperature-dependent operation of amorphous indium-gallium-zinc-oxide ferroelectric thin-film transistors was studied, revealing an increase in memory window at higher temperatures exceeding 3.5V. Additionally, competition between positive and negative shifts in threshold voltage due to carrier concentration and charge trapping was observed, offering potential for stable VTH behavior.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Xiaopeng Li, Lu Tai, Guoqing Zhao, Xuepeng Zhan, Xiaolei Wang, Masaharu Kobayashi, Jixuan Wu, Jiezhi Chen
Summary: This study comprehensively investigates the impacts of re-annealing on 7nm FE-Hf0.5Zr0.5O2 (HZO) capacitors to achieve robust reliabilities. The re-initialization phenomenon is clearly observed and the FE properties are significantly improved after re-annealing. Temperature-dependent phase transition and non-switchable region repairing are considered as the dominant mechanisms. The results demonstrate that re-annealing effectively improves FE-HZO performance and provides insights for reliability optimizations.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Kyul Ko, Dae-Hwan Ahn, Hoyoung Suh, Byeong-Kwon Ju, Jae-Hoon Han
Summary: The characteristics of ferroelectric capacitors with varying Al2O3 layer thickness and crystallization temperature were studied, and it was found that high remanent polarization and low interface trap density can be achieved by optimizing these parameters. Furthermore, the ferroelectric capacitor also exhibits good retention and endurance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Terence Mittmann, Thomas Szyjka, Hsain Alex, Marian Cosmin Istrate, Patrick D. Lomenzo, Lutz Baumgarten, Martina Mueller, Jacob L. Jones, Lucian Pintilie, Thomas Mikolajick, Uwe Schroeder
Summary: This study investigates the influence of oxygen concentration in the electrodes on the ferroelectric properties during crystallization anneal. It is found that oxygen-deficient electrodes improve the stabilization of the ferroelectric orthorhombic phase and reduce the wake-up effect, while oxygen-rich electrodes stabilize the nonferroelectric monoclinic phase with a negative impact on ferroelectric properties.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Physics, Applied
J. Bouaziz, P. Rojo Romeo, N. Baboux, B. Vilquin
Summary: For FRAM with HfO2-based materials, the imprint oscillation during retention tests with alternations of voltage pulses may affect the reading operation of industrial FRAM memories. The wake-up effect and retention loss are closely linked, and the stretched exponential model separates the remanent polarization reduction during retention tests into two parts.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Cristina Chirila, Georgia Andra Boni, Lucian Dragos Filip, Marius Husanu, Stefan Neatu, Cosmin Marian Istrate, Gwenael Le Rhun, Bertrand Vilquin, Lucian Trupina, Iuliana Pasuk, Mihaela Botea, Ioana Pintilie, Lucian Pintilie
Summary: The study revealed that PZT films grown on Si substrates exhibit different polarization and dielectric constant, along with a larger value for the pyroelectric coefficient, which are influenced by the structural quality and stoichiometry of the films.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Yanxiao Sun, Gang Niu, Wei Ren, Jinyan Zhao, Yankun Wang, Heping Wu, Luyue Jiang, Liyan Dai, Ya-Hong Xie, Pedro Rojo Romeo, Jordan Bouaziz, Bertrand Vilquin
Summary: This study presents FETs utilizing MoS2 and HZO materials, demonstrating that a channel with a length to width ratio of 0.2 achieves optimal FET performance, with stable threshold voltage, high on/off ratio, and high field effect mobility. The impact of channel lengths on FET performance is analyzed, revealing a hysteresis loop attributed to charge effects at interfaces. The hybrid MoS2/HZO FETs show potential for future low-power and high-speed integrated circuits.
Article
Materials Science, Ceramics
J. P. B. Silva, K. C. Sekhar, R. F. Negrea, C. Ghica, D. Dastan, M. J. M. Gomes
Summary: This work investigates the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass. It is found that the ferroelectric nature of the ZrO2 films is optimized through rapid thermal annealing at 600 degrees C. The increase in annealing temperature improves the ferroelectric properties by increasing the in-plane strain. The effect of electric field on the polarization switching kinetics of ZrO2 films is also studied.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Benoit Manchon, Greta Segantini, Nicolas Baboux, Pedro Rojo Romeo, Rabei Barhoumi, Ingrid C. Infante, Fabien Alibart, Dominique Drouin, Bertrand Vilquin, Damien Deleruyelle
Summary: This study investigates the effect of inserting a 2 nm thin aluminum layer between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering. It is shown that the oxidation of the interfacial layer during annealing impacts both the ferroelectric properties and the electrical conductivity of the junction.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Greta Segantini, Rabei Barhoumi, Benoit Manchon, Ingrid Canero Infante, Pedro Rojo Romeo, Matthieu Bugnet, Nicolas Baboux, Shruti Nirantar, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin
Summary: The effect of a Ti interfacial layer on the performance of TiN/HfZrO2/TiN capacitors at the nanoscale is investigated. The insertion of an ultra-thin Ti layer at the top electrode/HZO interface affects the crystalline phase and electrical properties of HZO. The formation of a TiOz layer at the top electrode/HZO interface is observed. The impact of the physical properties of the electrode/HZO interface on the electrical performance of thin HZO-based structures is discussed.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Sergio Gonzalez Casal, Xiaofei Bai, Kevin Alhada-Lahbabi, Bruno Canut, Bertrand Vilquin, Pedro Rojo Romeo, Solene Brottet, David Albertini, Damien Deleruyelle, Matthieu Bugnet, Ingrid Canero Infante, Brice Gautier
Summary: Mechanical switching of ferroelectric domains is achieved in PbZr0.2Ti0.8O3 thin films obtained by the sol-gel method, with a thickness of up to 200 nm, by applying a force higher than a given threshold.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
J. P. B. Silva, K. C. Sekhar, R. F. Negrea, J. L. MacManus-Driscoll, L. Pintilie
Summary: In recent years, progress has been made in obtaining wake-up-free orthorhombic ferroelectric hafnia and zirconia films through strategies such as microstructure tailoring and interface engineering. The rhombohedral phase of hafnia/zirconia has shown wake-up-free ferroelectric behavior under a constrained environment, which could have a significant impact on the study of ferroelectric binary oxide materials.
APPLIED MATERIALS TODAY
(2022)
Article
Physics, Multidisciplinary
Marius Adrian Husanu, Dana Georgeta Popescu, Federico Bisti, Luminita Mirela Hrib, Lucian Dragos Filip, Iuliana Pasuk, Raluca Negrea, Marian Cosmin Istrate, Leonid Lev, Thorsten Schmitt, Lucian Pintilie, Andrey Mishchenko, Cristian Mihail Teodorescu, Vladimir N. Strocov
Summary: A deeper understanding of the coupling at the interface of multiferroics heterostructures has been achieved through the use of synchrotron radiation techniques. The authors used k-resolved soft X-ray photoemission spectroscopy and first principles calculations to investigate the band structure of several multiferroic heterostructures, identifying the distinct signature of the interface. The experimental results revealed the influence of ferroelectric polarization on charge density, electron-lattice interaction, and mobility of charge carriers in these systems.
COMMUNICATIONS PHYSICS
(2022)
Article
Materials Science, Coatings & Films
Gang Yang, Pedro Rojo Romeo, Aleksandra Apostoluk, Bertrand Vilquin
Summary: This article investigates the lattice thermal conductivity of alpha-phase Ga2O3 through first principles calculations and iterative solutions of the Boltzmann transport equation. The study explores the effect of microstructure on thermal conductivity and compares it with beta-phase Ga2O3. The results show that alpha-phase Ga2O3 has lower thermal conductivity due to mass difference and bond strength. The study provides valuable insights into the thermal transport mechanisms of alpha-phase Ga2O3 and its potential applications in future devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Chemistry, Multidisciplinary
Jordan Bouaziz, Claudia Cancellieri, Bastian Rheingans, Lars P. H. Jeurgens, Fabio La Mattina
Summary: In the past 5 years, the transfer of epitaxial oxide thin films has become a hot topic in the scientific community. This work presents a new method for transferring epitaxial oxide films using a metallic Au/Ag bonding layer, which allows for a rigid bond to the final host substrate. SrRuO3 (SRO) and SrRuO3/SrTiO3 (STO) epitaxial films grown on a water-soluble Sr3Al2O6 sacrificial layer were successfully transferred onto a Si host substrate. The transferred membranes showed low roughness and straight interfaces without plastic deformation, indicating minimal mechanical damage and preservation of the initial quality. This procedure represents an important advancement in the development of technologies for membrane transfer of epitaxial oxides and superstructures.
ADVANCED MATERIALS INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Greta Segantini, Benoit Manchon, Ingrid Canero Infante, Matthieu Bugnet, Rabei Barhoumi, Shruti Nirantar, Edwin Mayes, Pedro Rojo Romeo, Nicholas Blanchard, Damien Deleruyelle, Sharath Sriram, Bertrand Vilquin
Summary: This study investigates the impact of interfacial microstructure and chemistry on the ferroelectricity of 6 nm-thick HZO-based capacitors with titanium nitride or tungsten electrode materials. The results show a strong correlation between the structural properties of electrode/HZO interfaces and the HZO ferroelectric performance. Precise control over the quality of electrode/HZO interfaces can significantly improve HZO ferroelectric properties.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Jose P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Begon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Iniguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sanchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Summary: Ferroelectric hafnium and zirconium oxides have shown significant progress in ultralow-power electronic systems, but technical limitations still hinder their application. This article aims to provide a comprehensive overview of the current state, challenges, and prospects for the development of these materials, with the collaboration of experts from different fields.
Proceedings Paper
Engineering, Electrical & Electronic
Ihor Pershukov, Jerome Richy, Emma Borel, Elisa Soulat, Marie Bousquet, Florian Dupont, Bertrand Vilquin
Summary: Epitaxial LiNbO3 thin films were grown successfully on a- and c-Al2O3 substrates using Pulsed Laser Deposition (PLD) technique. The influence of different growth parameters such as substrate temperature, oxygen pressure, and target composition on the film crystallinity and chemical composition were investigated. The physical and chemical properties of the deposited LiNbO3 layers were characterized.
2022 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF-PFM-ECAPD 2022)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Laryssa Mirelly Carvalho de Araujo, Jacques Junior Manguele, Bertrand Vilquin, Zhe Wang, Carolina Adamo, Pedro Rojo Romeo, Christophe Cibert, Gilles Poullain, Bernadette Domenges, Victor Pierron, Darrell G. Schlom, Laurence Mechin
Summary: Lead zirconate titanate (PZT) is a well-known ferroelectric material with excellent piezoelectric properties, ideal for actuator material in Micro-ElectroMechanical Systems (MEMS). Epitaxial growth of PZT is desired to improve performance, and in this study, epitaxially grown conductive oxide bottom electrode and PZT layers showed promising piezoelectric and ferroelectric properties for MEMS applications.
2021 SYMPOSIUM ON DESIGN, TEST, INTEGRATION & PACKAGING OF MEMS AND MOEMS
(2021)
