Next generation ferroelectric materials for semiconductor process integration and their applications

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

(2021) Evelyn T. Breyer et al.   APPLIED PHYSICS LETTERS

A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator

(2020) M. Ghatge et al.   APPLIED PHYSICS LETTERS

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Heterogeneous integration of single-crystalline complex-oxide membranes

(2020) Hyun S. Kum et al.   NATURE

A platform for making and transferring oxide films

(2020) Atsushi Tsukazaki   NATURE

Is negative capacitance FET a steep-slope logic switch?

(2020) Wei Cao et al.   Nature Communications

Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy

(2020) Matthew T. Hardy et al.   Applied Physics Express

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

(2020) Jana Ligl et al.   JOURNAL OF APPLIED PHYSICS

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films

(2020) Patrick D. Lomenzo et al.   Nano Energy

Reconfigurable frequency multiplication with a ferroelectric transistor

(2020) Halid Mulaosmanovic et al.   Nature Electronics

Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

(2020) Radu Berdan et al.   Nature Electronics

Fluorite-Structured Ferroelectric-/Antiferroelectric-Based Electrostatic Nanocapacitors for Energy Storage Applications

(2020) Faizan Ali et al.   ACS Applied Energy Materials

Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

(2020) Shinnosuke Yasuoka et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric devices and circuits for neuro-inspired computing

(2020) Panni Wang et al.   MRS Communications

What’s next for negative capacitance electronics?

(2020) Michael Hoffmann et al.   Nature Electronics

Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

(2020) Dixiong Wang et al.   IEEE ELECTRON DEVICE LETTERS

Stress-Induced Crystallization of Thin Hf1-XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications

(2019) Si Joon Kim et al.   ACS Applied Materials & Interfaces

Unveiling the double-well energy landscape in a ferroelectric layer

(2019) Michael Hoffmann et al.   NATURE

Ferroelectric negative capacitance

(2019) Jorge Íñiguez et al.   Nature Reviews Materials

AlScN: A III-V semiconductor based ferroelectric

(2019) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

(2019) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films

(2019) C. Mart et al.   APPLIED PHYSICS LETTERS

Transient Negative Capacitance Effect in Atomic-Layer-Deposited Al2 O3 /Hf0.3 Zr0.7 O2 Bilayer Thin Film

(2019) Keum Do Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

(2019) Elliot J. Fuller et al.   SCIENCE

Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness

(2019) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

(2019) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

(2019) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fluorite-structure antiferroelectrics

(2019) Min Hyuk Park et al.   REPORTS ON PROGRESS IN PHYSICS

Negative Capacitance for Electrostatic Supercapacitors

(2019) Michael Hoffmann et al.   Advanced Energy Materials

Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors

(2019) Yu-Hung Liao et al.   IEEE ELECTRON DEVICE LETTERS

Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

(2019) Stefano Leone et al.   Physica Status Solidi-Rapid Research Letters

Recent Progress in Two‐Dimensional Ferroelectric Materials

(2019) Zhao Guan et al.   Advanced Electronic Materials

The rise of 2D dielectrics/ferroelectrics

(2019) Minoru Osada et al.   APL Materials

Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

(2019) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Toward Thick Piezoelectric HfO 2 ‐Based Films

(2019) Tony Schenk et al.   Physica Status Solidi-Rapid Research Letters

Infrared-laser based characterization of the pyroelectricity in AlScN thin-films

(2019) Sebastian Bette et al.   THIN SOLID FILMS

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

(2019) Hojoon Ryu et al.   Scientific Reports

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Pyroelectricity of silicon-doped hafnium oxide thin films

(2018) Sven Jachalke et al.   APPLIED PHYSICS LETTERS

Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2

(2018) C. Mart et al.   APPLIED PHYSICS LETTERS

1T Non-Volatile Memory Design Using Sub-10nm Ferroelectric FETs

(2018) Ankit Sharma et al.   IEEE ELECTRON DEVICE LETTERS

Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

(2018) Milan Pesic et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

(2018) Isaku Kanno   JAPANESE JOURNAL OF APPLIED PHYSICS

Doped ZrO2 for future lead free piezoelectric devices

(2018) S. Starschich et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric negative capacitance domain dynamics

(2018) Michael Hoffmann et al.   JOURNAL OF APPLIED PHYSICS

Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

(2018) Ville Rontu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

On the stabilization of ferroelectric negative capacitance in nanoscale devices

(2018) Michael Hoffmann et al.   Nanoscale

Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films

(2018) Nicolas Kurz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

(2018) Sou-Chi Chang et al.   Physical Review Applied

Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

(2018) Min Hyuk Park et al.   Advanced Electronic Materials

Built-in Bias Generation in Anti-ferroelectric Stacks: Methods and Device Applications

(2018) Milan Pesic et al.   IEEE Journal of the Electron Devices Society

On the validity and applicability of models of negative capacitance and implications for MOS applications

(2018) J. A. Kittl et al.   APPLIED PHYSICS LETTERS

Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films

(2018) Takanori Mimura et al.   APPLIED PHYSICS LETTERS

La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors

(2018) Maxim G. Kozodaev et al.   APPLIED PHYSICS LETTERS

Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films

(2018) C. Mart et al.   APPLIED PHYSICS LETTERS

Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films

(2018) Yuan Lu et al.   APL Materials

Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories

(2018) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

High energy storage performances in lead-free BaBi3.9Pr0.1Ti4O15 relaxor ferroelectric films

(2018) Jieyu Chen et al.   APPLIED PHYSICS LETTERS

Thickness scaling of pyroelectric response in thin ferroelectric Hf1−xZrxO2 films

(2018) Sean W. Smith et al.   APPLIED PHYSICS LETTERS

Energy storage properties in BaTiO3-Bi3.25La0.75Ti3O12 thin films

(2018) B. B. Yang et al.   APPLIED PHYSICS LETTERS

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films

(2018) Shishir Pandya et al.   PHYSICAL REVIEW MATERIALS

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Acoustic Wave Filter Technology–A Review

(2017) Clemens C. W. Ruppel   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

Identifying and overcoming the interface originating c-axis instability in highly Sc enhanced AlN for piezoelectric micro-electromechanical systems

(2017) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Negative Capacitance Behavior in a Leaky Ferroelectric

(2016) Asif Islam Khan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

(2016) V. Tarala et al.   JOURNAL OF CRYSTAL GROWTH

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Negative capacitance detected

(2015) Gustau Catalan et al.   NATURE MATERIALS

Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

(2015) Michael Hoffmann et al.   Nano Energy

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

(2015) Min Hyuk Park et al.   Nano Energy

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Electromechanical coupling and gigahertz elastic properties of ScAlN films near phase boundary

(2014) Takahiko Yanagitani et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in wurtzite structure simple chalcogenide

(2014) Hiroki Moriwake et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

(2013) Morito Akiyama et al.   APPLIED PHYSICS LETTERS

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

(2013) Siyuan Zhang et al.   JOURNAL OF APPLIED PHYSICS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

(2012) Giovanni A. Salvatore et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

(2012) Xinwei Wang et al.   APPLIED PHYSICS LETTERS

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Optimal dielectric thickness for ferroelectric tunnel junctions with a composite barrier

(2012) Z. J. Ma et al.   JOURNAL OF APPLIED PHYSICS

Thin-film piezoelectric MEMS

(2012) Chang-Beom Eom et al.   MRS BULLETIN

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

(2010) A. Cano et al.   APPLIED PHYSICS LETTERS

Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys

(2010) Ferenc Tasnádi et al.   PHYSICAL REVIEW LETTERS

It's Time to Reinvent the Transistor!

(2010) T. N. Theis et al.   SCIENCE

Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier

(2009) M. Ye. Zhuravlev et al.   APPLIED PHYSICS LETTERS

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

(2009) A. Gruverman et al.   NANO LETTERS

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

(2009) T. Choi et al.   SCIENCE

Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

(2008) Morito Akiyama et al.   ADVANCED MATERIALS

Giant piezoelectric d[sub 33] coefficient in ferroelectric vanadium doped ZnO films

(2008) Y. C. Yang et al.   APPLIED PHYSICS LETTERS

Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

(2008) K. R. Udayakumar et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Negative capacitance to the rescue?

(2008) Victor V. Zhirnov et al.   Nature Nanotechnology

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS